R5F526TBAGFM datasheet(131/142 Pages) RENESAS

131 / 142 page

R01DS0407EJ0120 Rev.1.20

Page 131 of 142

Oct 31, 2024

RX26T Group

2. Electrical Characteristics

Note 1. Definition of program/erase cycle:

The program/erase cycle is the number of erasing for each block. When the number of program/erase cycles is n, each block

can be erased n times. For instance, when 4-byte program is performed 512 times for different addresses in 2-Kbyte block and

then the block is erased, the program/erase cycle is counted as one. However, the same address cannot be programmed more

than once before the next erase cycle (overwriting is prohibited).

Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to

guarantee all characteristics listed in this table.

Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and

the number of times programming and erasure proceed does not exceed the specified value.

Note 4. These values are based on the results of reliability testing.

Table 2.54

Data Flash Memory Characteristics

Conditions: VCC = 2.7 to 5.5 V, AVCC0 = AVCC1 = AVCC2 = 3.0 to 5.5 V,

VSS = AVSS0 = AVSS1 = AVSS2 = 0 V,

Temperature range for program/erase: Ta = Topr

Item

Symbol

FCLK = 4 MHz

20 MHz ≤ FCLK ≤ 60 MHz

Unit

Test Conditions

Min.

Typ.

Max.

Min.

Typ.

Max.

Program time

4 bytes

tDP4

—

0.36

3.8

—

0.16

1.7

Erase time

64 bytes

tDE64

—3.1

—1.7

Blank check time

4 bytes

tDBC4

——

µs

64 bytes

tDBC64

—

280

—

100

2 Kbytes

tDBC2K

—

6160

—

2200

Program/erase cycles*1

NDPEC

100000

—

100000

—

Cycles

Program suspend latency

tDSPD

—

264

—

120

µs

Primary erase suspend latency in

suspend priority mode

tDSESD1

—

216

—

120

Secondary erase suspend latency in

suspend priority mode

tDSESD2

—

300

—

300

Erase suspend latency in erase

priority mode

tDSEED

—

300

—

300

Forced stop command

tFD

——

Data retention*3, *4

tDDRP

—

Year

Ta ≤ 85°C

—

Ta ≤ 105°C

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