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R5F526TBAGFM Datasheet(PDF) 132 Page - Renesas Technology Corp

Part # R5F526TBAGFM
Description  Renesas MCUs
PDF  142 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F526TBAGFM Datasheet(HTML) 132 Page - Renesas Technology Corp

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R01DS0407EJ0120 Rev.1.20
Page 132 of 142
Oct 31, 2024
RX26T Group
2. Electrical Characteristics
Note 1. Definition of program/erase cycle:
The program/erase cycle is the number of program for the same address.
Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to
guarantee all characteristics listed in this table.
Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and
the number of times programming and erasure proceed does not exceed the specified value.
Note 4. These values are based on the results of reliability testing.
Figure 2.84
Flash Memory Program/Erase Suspend Timing
Table 2.55
Option Setting Memory Characteristics
Conditions: VCC = 2.7 to 5.5 V, AVCC0 = AVCC1 = AVCC2 = 3.0 to 5.5 V,
VSS = AVSS0 = AVSS1 = AVSS2 = 0 V,
Temperature range for program/erase: Ta = Topr
Item
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Program/erase cycles*1
NPEC
1000*2
——
Cycles
Data retention*3, *4
tDRP
20
—
—
Year
Ta ≤ 85°C
10
—
—
Ta ≤ 105°C
FCU command
FSTATR.FRDY
Programming pulse
• Program suspend
FCU command
FSTATR.FRDY
Erasure pulse
• Erase suspend in suspend priority mode
FCU command
FSTATR.FRDY
Erasure pulse
• Erase suspend in erase priority mode
Program
Suspend
Ready
Not Ready
Ready
Programming
tSPD
Erase
Suspend
Ready
Not Ready
Ready
tSEED
Erasing
Erase
Suspend
Resume
Suspend
Ready
Not Ready
Ready
Not Ready
tSESD1
tSESD2
Erasing
Erasing



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