R5F5651EDDFM datasheet(161/188 Pages) RENESAS

161 / 188 page

R01DS0276EJ0240 Rev.2.40

Page 161 of 188

Oct 31, 2023

RX65N Group, RX651 Group

2. Electrical Characteristics

2.5

USB Characteristics

Figure 2.86

DP and DM Output Timing (Low Speed)

Figure 2.87

Test Circuit (Low Speed)

Table 2.47

On-Chip USB Low Speed (Host Only) Characteristics (DP and DM Pin Characteristics)

Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 3.0 to 3.6 V, 3.0 V ≤ VREFH0 ≤ AVCC0,

VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V,

UCLK = 48 MHz, PCLKA = 8 to 120 MHz, PCLKB = 8 to 60 MHz, Ta = Topr

Item

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Input

characteristics

Input high level voltage

VIH

2.0

—

Input low level voltage

VIL

——

0.8

Differential input sensitivity

VDI

0.2

—

| DP – DM |

Differential common mode range

VCM

0.8

—

2.5

Output

characteristics

Output high level voltage

VOH

2.8

—

3.6

IOH = –200 µA

Output low level voltage

VOL

0.0

—

0.3

IOL = 2 mA

Cross-over voltage

VCRS

1.3

—

2.0

Figure 2.86

Rise time

tLR

—

300

Fall time

tLF

—

300

Rise/fall time ratio

tLR/tLF

—

125

tLR/tLF

Pull-down

characteristics

DP/DM pull-down resistance

(when the host controller function is

selected)

Rpd

14.25

—

24.80

kΩ

DP, DM

tLF

tLR

90%

10%

90%

VCRS

Observation

point

200 pF to

600 pF

200 pF to

600 pF

1.5 k



3.6 V



R5F5651EDDFM Datasheet(PDF) 161 Page - Renesas Technology Corp

R5F5651EDDFM Datasheet(HTML) 161 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL