| Electronic Components Datasheet Search |
|
R5F5671CDDLE Datasheet(PDF) 165 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
R5F5671CDDLE Datasheet(HTML) 165 Page - Renesas Technology Corp |
|
165 / 179 page ![]() R01DS0373EJ0120 Rev.1.20 Page 165 of 179 Sep 30, 2024 RX671 Group 2. Electrical Characteristics Note 1. Definition of program/erase cycle: The program/erase cycle is the number of program for the same address. Note 2. Characteristics are degraded as the number of program/erase increases. This is the minimum value of program/erase cycles to guarantee all characteristics listed in this table. Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and the number of times programming and erasure proceed does not exceed the specified value. Note 4. These values are based on the results of reliability testing. Table 2.63 Option Setting Memory Characteristics Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0, VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = 0 V, Temperature range for programming/erasure: Ta = Topr Item Symbol Min. Typ. Max. Unit Test Conditions Program/erase cycles*1 NPEC 1000*2 —— Cycles Data retention*3, *4 tDRP 20 — — Year Ta ≤ 85°C 10 — — Ta ≤ 105°C |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |