STA323W datasheet(18/77 Pages) STMICROELECTRONICS

18 / 77 page

Electrical specifications

STA323W

18/77

4.2

DC electrical specifications (3.3 V buffers)

Operating conditions VDD33 = 3.3 V ±0.3 V, Tamb = 25° C unless otherwise specified

4.3

Power electrical specifications

Operating conditions VDD33 = 3.3 V ±0.3 V, VL = 3.3 V, VCC =30V, Tamb = 25° C unless

otherwise specified.

Table 10.

DC electrical characteristics

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

VIL

Low level Input voltage

0.8

VIH

High level Input voltage

2.0

Vhyst

Schmitt trigger hysteresis

0.4

Vol

Low level output

IoI = 2mA

0.15

Voh

High level output

Ioh = -2mA

VDD -

0.15

Table 11.

Power electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

RdsON

Power Pchannel/Nchannel

MOSFET RdsON

Id = 1 A

200

270

Ω

Idss

Power Pchannel/Nchannel

leakage Idss

Vcc = 35 V

µA

Power Pchannel RdsON

matching

Id = 1 A

Power Nchannel RdsON

matching

Id = 1 A

Dt_s

Low current dead time (static)

See test circuits , Figure

9 and Figure 10

td ON

Turn-on delay time

Resistive load

100

td OFF

Turn-off delay time

Resistive load

100

Rise time

Resistive load, Figure 9

and Figure 10

Fall time

Resistive load, Figure 9

and Figure 10

VCC

Supply voltage

Low logical state voltage

VL = 3.3 V

0.8

High logical state voltage

VL = 3.3 V

1.7

IVCC-

PWRDN

Supply current from Vcc in

PWRDN

PWRDN = 0

IVCC-hiz

Supply current from Vcc in 3-

state

VCC = 30 V, 3-state

STA323W Datasheet(PDF) 18 Page - STMicroelectronics

STA323W Datasheet(HTML) 18 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77

Datasheet Download

Link URL