H8SLASH3021 datasheet(508/712 Pages) RENESAS

508 / 712 page

15. ROM

Rev.2.00 Mar. 22, 2007 Page 484 of 684

REJ09B0352-0200

15.8.3

Error Protection

In error protection, an error is detected when H8/3022 Group runaway occurs during flash

memory programming/erasing*

1, or operation is not performed in accordance with the

program/erase algorithm, and the program/erase operation is aborted. Aborting the program/erase

operation prevents damage to the flash memory due to overprogramming or overerasing.

If the H8/3022 Group malfunctions during flash memory programming/erasing, the FLER bit is

set to 1 in FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, EBR1, and

EBR2 settings are retained, but program mode or erase mode is aborted at the point at which the

error occurred. Program mode or erase mode cannot be re-entered by re-setting the P or E bit.

However, PV and EV bit setting is enabled, and a transition can be made to verify mode.*

FLER bit setting conditions are as follows:

1. When the flash memory of the relevant address area is read during programming/erasing

(including vector read and instruction fetch)

2. Immediately after exception handling (excluding a reset) during programming/erasing

3. When a SLEEP instruction (including software standby) is executed during

programming/erasing

Error protection is released only by a power-on reset and in hardware standby mode.

Notes: 1. State in which the P bit and E bit in FLMCR1 are set to 1. Note that NMI input is

disabled in this state.

It is possible to perform a program-verify operation on the 128 bytes being

programmed, or an erase-verify on the block being erased.

H8/3021 Datasheet(PDF) 508 Page - Renesas Technology Corp