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H8/3021 Datasheet(PDF) 506 Page - Renesas Technology Corp |
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H8/3021 Datasheet(HTML) 506 Page - Renesas Technology Corp |
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506 / 712 page ![]() 15. ROM Rev.2.00 Mar. 22, 2007 Page 482 of 684 REJ09B0352-0200 Table 15.11 Hardware Protection Functions Item Description Program Erase Verify* 1 FWE pin protection • When a low level is input to the FWE pin, FLMCR1, EBR1, and EBR2 are initialized, and the program/erase-protected state is entered. * 4 No* 2 No* 3 No* 2 Reset/standby protection • In a power-on reset (including a WDT power- on reset) and in standby mode, FLMCR1, FLMCR2, EBR1, and EBR2 are initialized, and the program/erase-protected state is entered. • In a reset via the RES pin, the reset state is not entered unless the RES pin is held low until oscillation stabilizes after powering on. In the case of a reset during operation, hold the RES pin low for the RES pulse width specified in the AC Characteristics section. * 5 No No* 3 No* 2 Error protection • When a microcomputer operation error (error generation (FLER=1)) was detected while flash memory was being programmed/erased, error protection is enabled. At this time, the FLMCR and EBR settings are held, but programming/erasing is aborted at the time the error was generated. Error protection is released only by a reset via the RES pin or a WDT reset, or in the hardware standby mode. No No* 3 Yes* 6 Notes: 1. Two modes: program-verify and erase-verify. 2. Excluding a RAM area overlapping flash memory. 3. All blocks are unerasable and block-by-block specification is not possible. 4. For details see section 15.11, Notes on Flash Memory Programming and Erasing. 5. See section 4.2.2, Reset Sequence, and section 15.11, Notes on Flash Memory Programming and Erasing. The H8/3022F requires a minimum of 20 system clock cycles for a reset during operation. 6. It is possible to perform a program-verify operation on the 128 bytes being programmed, or an erase-verify operation on the block being erased. |
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