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PI6CDBL402B Datasheet(PDF) 8 Page - Pericom Semiconductor Corporation

Part # PI6CDBL402B
Description  4 -Output Low Power PCIE GEN 1-2-3 Buffer
PDF  13 Pages
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Manufacturer  PERICOM [Pericom Semiconductor Corporation]
Direct Link  http://www.pericom.com
Logo PERICOM - Pericom Semiconductor Corporation

PI6CDBL402B Datasheet(HTML) 8 Page - Pericom Semiconductor Corporation

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All trademarks are property of their respective owners.
www.pericom.com
06/30/15
PI6CDBL402B
4 -Output Low Power PCIE GEN 1-2-3 Buffer
Electrical Characteristics–Clock Input Parameters (T
A = -40~85
o
C; VDD = 3.3V+/-10%; VDDO =
3.3V+/-10%, VDDO = 2.5V+/-10%, VDDO = 1.8V+/-10%, See Test Loads for Loading Conditions)
Symbol Parameters
Condition
Min.
Type Max. Units
V
IHDIF
Input High Voltage - DIF_IN1
Differential inputs
(single-ended measurement)
600
800
1150
mV
V
ILDOF
Input Low Voltage - DIF_IN1,3
Differential inputs
(single-ended measurement)
V
SS -
300
0
300
mV
V
COM
Input Common Mode Voltage -
DIF_IN1
Common Mode Input Voltage
300
725
mV
V
SWING
Input Amplitude - DIF_IN1
Peak to Peak value (V
IHDIF - VILDIF)
300
1450
mV
dv/dt
Input Slew Rate - DIF_IN1,2
Measured differentially
0.4
V/ns
I
IN
Input Leakage Current1
V
IN = VDD , VIN = GND
-5
5
uA
d
tin
Input Duty Cycle1
Measurement from differential wave-
from
45
55
%
J
DIFIn
Input Jitter - Cycle to Cycle1
Differential Measurement
0
150
ps
Note:
1. Guaranteed by design and characterization, not 100% tested in production.
2. Slew rate measured through +/-75mV window centered around differential zero
3. The device can be driven from a single ended clock by driving the true clock and biasing the complement clock input to the VBIAS, where VBIAS is (VIH-
HIGH - VIHLOW)/2
Supply Voltage to Ground Potential......................................................4.6V
All Inputs and Output.....................................................-0.5V toVDD+0.5V
Ambient Operating Temperature........................................... -40 to +85°C
Storage Temperature.......................................................... –65°C to +150°C
Junction Temperature .......................................................................... 125°C
Soldering Temperature.........................................................................260°C
ESD Protection (Input) ...........................................................2000V(HBM)
Note: Stresses greater than those listed under MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
15-0083



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