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PI6CDBL402B Datasheet(PDF) 8 Page - Pericom Semiconductor Corporation |
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PI6CDBL402B Datasheet(HTML) 8 Page - Pericom Semiconductor Corporation |
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8 / 13 page ![]() 88 All trademarks are property of their respective owners. www.pericom.com 06/30/15 PI6CDBL402B 4 -Output Low Power PCIE GEN 1-2-3 Buffer Electrical Characteristics–Clock Input Parameters (T A = -40~85 o C; VDD = 3.3V+/-10%; VDDO = 3.3V+/-10%, VDDO = 2.5V+/-10%, VDDO = 1.8V+/-10%, See Test Loads for Loading Conditions) Symbol Parameters Condition Min. Type Max. Units V IHDIF Input High Voltage - DIF_IN1 Differential inputs (single-ended measurement) 600 800 1150 mV V ILDOF Input Low Voltage - DIF_IN1,3 Differential inputs (single-ended measurement) V SS - 300 0 300 mV V COM Input Common Mode Voltage - DIF_IN1 Common Mode Input Voltage 300 725 mV V SWING Input Amplitude - DIF_IN1 Peak to Peak value (V IHDIF - VILDIF) 300 1450 mV dv/dt Input Slew Rate - DIF_IN1,2 Measured differentially 0.4 V/ns I IN Input Leakage Current1 V IN = VDD , VIN = GND -5 5 uA d tin Input Duty Cycle1 Measurement from differential wave- from 45 55 % J DIFIn Input Jitter - Cycle to Cycle1 Differential Measurement 0 150 ps Note: 1. Guaranteed by design and characterization, not 100% tested in production. 2. Slew rate measured through +/-75mV window centered around differential zero 3. The device can be driven from a single ended clock by driving the true clock and biasing the complement clock input to the VBIAS, where VBIAS is (VIH- HIGH - VIHLOW)/2 Supply Voltage to Ground Potential......................................................4.6V All Inputs and Output.....................................................-0.5V toVDD+0.5V Ambient Operating Temperature........................................... -40 to +85°C Storage Temperature.......................................................... –65°C to +150°C Junction Temperature .......................................................................... 125°C Soldering Temperature.........................................................................260°C ESD Protection (Input) ...........................................................2000V(HBM) Note: Stresses greater than those listed under MAXIMUM RAT- INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) 15-0083 |
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