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AS4SD32M16DG-75/XT Datasheet(PDF) 9 Page - Micross Components

Part # AS4SD32M16DG-75/XT
Description  Synchronous DRAM Memory
PDF  52 Pages
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

AS4SD32M16DG-75/XT Datasheet(HTML) 9 Page - Micross Components

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SDRAM
AS4SD32M16
AS4SD32M16
Rev. 2.0 10/13
Micross Components reserves the right to change products or specifications without notice.
9
OPERATION
BANK/ROW ACTIVATION
Before any READ or WRITE commands can be issued to a
bank within the SDRAM, a row in that bank must be “opened.”
This is accomplished via the ACTIVE command, which selects
both the bank and the row to be activated (see Figure 3).
After opening a row (issuing an ACTIVE command), a
READ or WRITE command may be issued to that row, sub-
ject to the t
RCD specification. tRCD (MIN) should be divided
by the clock period and rounded up to the next whole number
to determine the earliest clock edge after the ACTIVE com-
mand on which a READ or WRITE command can be entered.
For example, a tRCD specification of 20ns with a 125 MHz
clock (8ns period) results in 2.5 clocks, rounded to 3. This is
reflected in Figure 4, which covers any case where 2 < t
RCD
(MIN)/
t
CK < 3. (The same procedure is used to convert
other specification limits from time units to clock cycles.)
A subsequent ACTIVE command to a different row in the
same bank can only be issued after the previous active row
has been “closed” (precharged). The minimum time interval
between successive ACTIVE commands to the same bank is
defined by t
RC.
A subsequent ACTIVE command to another bank can be
issued while the first bank is being accessed, which results in
a reduction of total row-access overhead. The minimum time
interval between successive ACTIVE commands to different
banks is defined by t
RRD.
FIGURE 3: Activating a Specific Row
in a Specific Bank
FIGURE 4: Example - Meeting t
RCD
(MIN) When 2 < t
RCD
(MIN)/ t
CK
< 3



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