L9779WD-SPI datasheet(77/141 Pages) STMICROELECTRONICS

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L9779WD-SPI

Functional description

140

Electrical and diagnosis characteristics of OUTA, B, C, D when configured as

single power stages

Same parameter and diagnosis function as LSd.

Table 35. Electrical and diagnosis characteristics of

OUTA, B, C, D when configured as single

power stages

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

OUTA,

OUTB,

OUTC,

OUTD

RDS-on LSd

Drain source resistance

Iload = 0.6 A

1.5



IOUTlk

Output leakage current

Vpin = 13.5 V

µA

VS/R

Voltage S/R On/off

R = 21 Ω, C = 10nF

From 80% to 30% of

VOUT

2-6

V/us

VS/R GateKill

Fast VR/S off when an

OVC fault happens

Load: 8 Ω, 10nF - from

80% to 30% of VOUT

V/µs

TTurn-On_ LSd Turn-on delay time

From command to 80%

VOUT Load: 21 Ω, 10nF

µs

TTurn-Off_ LSd Turn-off delay time

From command to 30%

VOUT Load: 21 Ω, 10nF

µs

Vcl

Output clamping voltage Iload = 0.6A

PWclampSP

Clamp single pulse ATE

test

Iload = 0.6A; single pulse

PWclampRP

Clamp repetitive pulses

Freq = 1 Hz

(to be verified) Reliability

Test

 30 °C;

I_OUT_n < 0.45 A

1 Mio cycles

6.5

Tc < 80°C;

I_OUT_n

 0.3A

25 Mio cycle

6.5

Tc < 100°C;

I_OUT_n < 0.3A

20 Mio cycle

6.5

Tc < 130 °C;

I_OUT_n < 0.3 A

5 Mio cycle

5.5

Reverse

voltage

Body diode reverse

current voltage drop

I = -0.6 A

-0.5

-1

-1.1

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