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GD25Q41ASIGT Datasheet(PDF) 44 Page - GigaDevice Semiconductor (Beijing) Inc.

Part # GD25Q41ASIGT
Description  Uniform Sector Dual and Quad Serial Flash
PDF  51 Pages
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Manufacturer  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Direct Link  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25Q41ASIGT Datasheet(HTML) 44 Page - GigaDevice Semiconductor (Beijing) Inc.

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Uniform Sector
Dual and Quad Serial Flash
GD25Q21B
44
8.8. AC CHARACTERISTICS
(T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf)
Symbol
Parameter
Min.
Typ.
Max.
Unit.
FC
Serial Clock Frequency For: FAST_READ, PP, SE, BE,
DP, RES, WREN, WRDI, WRSR, RDSR, RDID (*1,*2,*4
I/O)
DC.
104
MHz
fR
Serial Clock Frequency For: Read
DC.
80
MHz
tCLH
Serial Clock High Time
3.5
ns
tCLL
Serial Clock Low Time
3.5
ns
tCLCH
Serial Clock Rise Time (Slew Rate)
0.1
V/ns
tCHCL
Serial Clock Fall Time (Slew Rate)
0.1
V/ns
tSLCH
CS# Active Setup Time
5
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
tSHSL
CS# High Time (read/write)
20
ns
tSHQZ
Output Disable Time
6
ns
tCLQX
Output Hold Time
1.2
ns
tDVCH
Data In Setup Time
2
ns
tCHDX
Data In Hold Time
5
ns
tHLCH
Hold# Low Setup Time (relative to Clock)
3.5
ns
tHHCH
Hold# High Setup Time (relative to Clock)
3.5
ns
tCHHL
Hold# High Hold Time (relative to Clock)
3.5
ns
tCHHH
Hold# Low Hold Time (relative to Clock)
3.5
ns
tHLQZ
Hold# Low To High-Z Output
6
ns
tHHQX
Hold# Low To Low-Z Output
6
ns
tCLQV
Clock Low To Output Valid
6
ns
tWHSL
Write Protect Setup Time Before CS# Low
20
ns
tSHWL
Write Protect Hold Time After CS# High
100
ns
tDP
CS# High To Deep Power-Down Mode
0.1
μs
tRES1
CS# High To Standby Mode Without Electronic Signature
Read
5
μs
tRES2
CS# High To Standby Mode With Electronic Signature
Read
5
μs
tHPM
CS# High To High Performance Mode
0.2
us
tSUS
CS# High To Next Command After Suspend
20
us
tW
Write Status Register Cycle Time
10
30
ms
tPP
Page Programming Time
0.35
2.4
ms
tSE
Sector Erase Time
50
200\400 (1)
ms
tBE
Block Erase Time(32K\64K)
0.18\0.25
0.6\0.8
s
tCE
Chip Erase Time
0.8
1.5
s



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