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MCT8317A Datasheet(PDF) 19 Page - Texas Instruments |
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MCT8317A Datasheet(HTML) 19 Page - Texas Instruments |
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19 / 161 page ![]() 8.3.5 Slew Rate Control An adjustable gate-drive current control for the MOSFETs in the output stage is provided to achieve configurable slew rate for EMI mitigation. The MOSFET VDS slew rate is a critical factor for optimizing radiated emissions, total energy and duration of diode recovery spikes and switching voltage transients related to parasitic elements of the PCB. This slew rate is predominantly determined by the control of the internal MOSFET gate current as shown in Figure 8-4. VM OUTx VCP (Internal) Slew Rate Control Slew Rate Control VCP (Internal) GND Figure 8-4. Slew Rate Circuit Implementation The slew rate of each half-bridge can be adjusted through SLEW_RATE settings. Slew rate can be configured as 25-V/µs, 50-V/µs, 125-V/µs or 200-V/µs. The slew rate is calculated by the rise-time and fall-time of the voltage on OUTx pin as shown in Figure 8-5. 20% 80% 20% 80% t fall VM t rise 0 VM V OUTx Time Figure 8-5. Slew Rate Timings www.ti.com MCT8317A SLLSFQ2 – JANUARY 2023 Copyright © 2023 Texas Instruments Incorporated Submit Document Feedback 19 Product Folder Links: MCT8317A |
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