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M29DW128F Datasheet(PDF) 79 Page - STMicroelectronics

Part # M29DW128F
Description  128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
PDF  94 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29DW128F Datasheet(HTML) 79 Page - STMicroelectronics

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M29DW128F
Common Flash Interface (CFI)
79/94
Table 37.
CFI Query System Interface information(1)
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
2.7V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100mV
3.6V
1Dh
3Ah
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100mV
11.5V
1Eh
3Ch
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 10mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single byte/Word program = 2n µs
16µs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n µs
NA
21h
42h
0009h
Typical timeout per individual block erase = 2n ms
512ms
22h
44h
0000h
Typical timeout for full Chip Erase = 2n ms
NA
23h
46h
0005h
Maximum timeout for byte/Word program = 2n times typical
512µs
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0004h
Maximum timeout per individual block erase = 2n times typical
8s
26h
4Ch
0000h
Maximum timeout for Chip Erase = 2n times typical
NA
1.
The values given in the above table are valid for both packages.



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