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M29DW128F Datasheet(PDF) 35 Page - STMicroelectronics |
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M29DW128F Datasheet(HTML) 35 Page - STMicroelectronics |
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35 / 94 page ![]() M29DW128F Command interface 35/94 6.2 Fast Program commands The M29DW128F offers a set of Fast Program commands to improve the programming throughput: ● Write to Buffer and Program ● Double and Quadruple Word, Program ● Double, Quadruple and Octuple Byte Program ● Unlock Bypass. See either Table 14, or Table 13, depending on the configuration that is being used, for a summary of the Fast Program commands. When VPPH is applied to the VPP/Write Protect pin the memory automatically enters the Fast Program mode. The user can then choose to issue any of the Fast Program commands. Care must be taken because applying a VPPH to the VPP/WP pin will temporarily unprotect any protected block. Only one bank can be programmed at any one time. The other bank must be in Read mode or Erase Suspend. After programming has started, Bus Read operations in the Bank being programmed output the Status Register content, while Bus Read operations to the other Bank output the contents of the memory array. Fast program commands can be suspended and then resumed by issuing a Program Suspend command and a Program Resume command, respectively (see Section 6.1.9: Program Suspend command and Section 6.1.10: Program Resume command paragraphs.) After the fast program operation has completed, the memory will return to the Read mode, unless an error has occurred. When an error occurs Bus Read operations to the Bank where the command was issued will continue to output the Status Register. A Read/Reset command must be issued to reset the error condition and return to Read mode. One of the Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’. Typical Program times are given in Table 18: Program, Erase Times and Program, Erase Endurance Cycles. |
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