S29GL01GS10DFIV13 datasheet(60/108 Pages) CYPRESS

60 / 108 page

Document Number: 001-98285 Rev. *R

Page 60 of 108

S29GL01GS/S29GL512S

S29GL256S/S29GL128S

Table 7.4 CFI System Interface String

Word Address

Data

Description

(SA) + 001Bh

0027h

VCC Min. (erase/program) (D7–D4: volts, D3–D0: 100 mV)

(SA) + 001Ch

0036h

VCC Max. (erase/program) (D7–D4: volts, D3–D0: 100 mV)

(SA) + 001Dh

0000h

VPP Min. voltage (00h = no VPP pin present)

(SA) + 001Eh

0000h

VPP Max. voltage (00h = no VPP pin present)

(SA) + 001Fh

0008h

Typical timeout per single word write 2N µs

(SA) + 0020h

0009h

Typical timeout for max

multi-byte program, 2N µs

(00h = not supported)

(SA) + 0021h

0008h

Typical timeout per individual block erase 2N ms

(SA) + 0022h

0012h (1 Gb)

0011h (512 Mb)

0010h (256 Mb)

000Fh (128 Mb)

Typical timeout for full chip erase 2N ms (00h = not supported)

(SA) + 0023h

0001h

Max. timeout for single word write 2N times typical

(SA) + 0024h

0002h

Max. timeout for buffer write 2N times typical

(SA) + 0025h

0003h

Max. timeout per individual block erase 2N times typical

(SA) + 0026h

0003h

Max. timeout for full chip erase 2N times typical

(00h = not supported)

Table 7.5 CFI Device Geometry Definition

Word Address

Data

Description

(SA) + 0027h

001Bh (1 Gb)

001Ah (512 Mb)

0019h (256 Mb)

0018h (128 Mb)

Device Size = 2N byte;

(SA) + 0028h

0001h

Flash Device Interface Description 0 = ×8-only, 1 = ×16-only, 2 = ×8/×16 capable

(SA) + 0029h

0000h

(SA) + 002Ah

0009h

Max. number of byte in multi-byte write = 2N

(00 = not supported)

(SA) + 002Bh

0000h

(SA) + 002Ch

0001h

Number of Erase Block Regions within device

1 = Uniform Device, 2 = Boot Device

(SA) + 002Dh

00XXh

Erase Block Region 1 Information (refer to JEDEC JESD68-01 or JEP137

specifications)

00FFh, 0003h, 0000h, 0002h =1 Gb

00FFh, 0001h, 0000h, 0002h = 512 Mb

00FFh, 0000h, 0000h, 0002h = 256 Mb

007Fh, 0000h, 0000h, 0002h = 128 Mb

(SA) + 002Eh

000Xh

(SA) + 002Fh

0000h

(SA) + 0030h

000Xh

(SA) + 0031h

0000h

Erase Block Region 2 Information (refer to CFI publication 100)

(SA) + 0032h

0000h

(SA) + 0033h

0000h

(SA) + 0034h

0000h

S29GL01GS10DFIV13 Datasheet(PDF) 60 Page - Cypress Semiconductor

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