S29GL01GS10DFIV13 datasheet(26/108 Pages) CYPRESS

Part #	S29GL01GS10DFIV13

Description	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory

PDF	108 Pages

Scroll/Zoom	100%

Manufacturer	CYPRESS [Cypress Semiconductor]

Direct Link	http://www.cypress.com

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26 / 108 page

Document Number: 001-98285 Rev. *R

Page 26 of 108

S29GL01GS/S29GL512S

S29GL256S/S29GL128S

Figure 5.3 Write Buffer Programming Operation with Status Register

Notes:

1. See

Table 7.1 onpage55 for the command sequence as required for Write Buffer Programming.

2. When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address locations with data, all addresses

MUST fall within the selected Write-Buffer Page.

Write “Write to Buffer”

command Sector Address

Write “Word Count”

to program - 1 (WC)

Sector Address

Write Starting Address/Data

WC = 0?

ABORT Write to

Buffer Operation?

Write to a different

Sector Address

Write to Buffer ABORTED.

Must write “Write-to-Buffer

ABORT RESET”

command sequence to

return to READ mode.

Write next Address/Data pair

WC = WC - 1

Write Program Buffer to Flash

Confirm, Sector Address

Read Status Register

DRB

SR[7] = 0?

WBASB

SR[3] = 1?

PSB

SR[4] = 0?

Program Fail

Program Successful

Yes

(Note 2)

Yes

Program aborted during

Write to Buffer command

SLSB

SR[1] = 0?

Yes

Sector Locked Error

Program Fail

S29GL01GS10DFIV13 Datasheet(PDF) 26 Page - Cypress Semiconductor

S29GL01GS10DFIV13 Datasheet(HTML) 26 Page - Cypress Semiconductor

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