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STM32G030F6 Datasheet(PDF) 46 Page - STMicroelectronics

Part # STM32G030F6
Description  Arm® Cortex®-M0 32-bit MCU, up to 64 KB Flash, 8 KB RAM, 2x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
PDF  94 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G030F6 Datasheet(HTML) 46 Page - STMicroelectronics

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Electrical characteristics
STM32G030x6/x8
46/94
DS12991 Rev 1
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 48: I/O static characteristics.
Table 28. Current consumption in Stop 1 mode
Symbol
Parameter
Conditions(1)
Typ
Max(2)
Unit
RTC
VDD
25 °C
85 °C
25 °C
85 °C
IDD(Stop 1)
Supply current
in Stop 1 mode
Disabled
2.4 V
3.4
28
17
130
µA
3 V
3.6
28
22
140
3.6 V
3.9
29
28
155
Enabled
(clocked by
LSE bypass)
2.4 V
3.9
28
22
140
3 V
4.1
29
23
155
3.6 V
4.6
29
28
160
1. Flash memory not powered.
2. Based on characterization results, not tested in production.
Table 29. Current consumption in Standby mode
Symbol
Parameter
Conditions
Typ
Max(1)
Unit
General
VDD
25 °C
85 °C
25 °C
85 °C
IDD(Standby)
Supply current in
Standby mode
RTC disabled
2.4 V
1.0
1.8
2.1
14
µA
3.0 V
1.2
2.1
2.7
16
3.6 V
1.4
2.5
3.0
19
RTC enabled,
clocked by LSI
2.4 V
1.3
2.1
2.2
17
3.0 V
1.7
2.5
2.9
19
3.6 V
2.1
3.0
3.8
19
1. Based on characterization results, not tested in production.
Table 30. Current consumption in VBAT mode
Symbol
Parameter
Conditions
Typ
Max
Unit
RTC
VBAT
25 °C
85 °C
25 °C
85 °C
IDD_VBAT
Supply current
in VBAT mode
Enabled,
clocked by LSE
bypass at
32.768 kHz
2.4 V
270
360
-
-
nA
3.0 V
360
460
-
-
3.6 V
470
600
-
-
Enabled,
clocked by LSE
crystal at
32.768 kHz
2.4 V
410
440
-
-
3.0 V
510
530
-
-
3.6 V
630
770
-
-



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