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STM32G030F6 Datasheet(PDF) 46 Page - STMicroelectronics |
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STM32G030F6 Datasheet(HTML) 46 Page - STMicroelectronics |
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46 / 94 page ![]() Electrical characteristics STM32G030x6/x8 46/94 DS12991 Rev 1 I/O system current consumption The current consumption of the I/O system has two components: static and dynamic. I/O static current consumption All the I/Os used as inputs with pull-up generate current consumption when the pin is externally held low. The value of this current consumption can be simply computed by using the pull-up/pull-down resistors values given in Table 48: I/O static characteristics. Table 28. Current consumption in Stop 1 mode Symbol Parameter Conditions(1) Typ Max(2) Unit RTC VDD 25 °C 85 °C 25 °C 85 °C IDD(Stop 1) Supply current in Stop 1 mode Disabled 2.4 V 3.4 28 17 130 µA 3 V 3.6 28 22 140 3.6 V 3.9 29 28 155 Enabled (clocked by LSE bypass) 2.4 V 3.9 28 22 140 3 V 4.1 29 23 155 3.6 V 4.6 29 28 160 1. Flash memory not powered. 2. Based on characterization results, not tested in production. Table 29. Current consumption in Standby mode Symbol Parameter Conditions Typ Max(1) Unit General VDD 25 °C 85 °C 25 °C 85 °C IDD(Standby) Supply current in Standby mode RTC disabled 2.4 V 1.0 1.8 2.1 14 µA 3.0 V 1.2 2.1 2.7 16 3.6 V 1.4 2.5 3.0 19 RTC enabled, clocked by LSI 2.4 V 1.3 2.1 2.2 17 3.0 V 1.7 2.5 2.9 19 3.6 V 2.1 3.0 3.8 19 1. Based on characterization results, not tested in production. Table 30. Current consumption in VBAT mode Symbol Parameter Conditions Typ Max Unit RTC VBAT 25 °C 85 °C 25 °C 85 °C IDD_VBAT Supply current in VBAT mode Enabled, clocked by LSE bypass at 32.768 kHz 2.4 V 270 360 - - nA 3.0 V 360 460 - - 3.6 V 470 600 - - Enabled, clocked by LSE crystal at 32.768 kHz 2.4 V 410 440 - - 3.0 V 510 530 - - 3.6 V 630 770 - - |
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