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STM32G030F6 Datasheet(PDF) 60 Page - STMicroelectronics |
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STM32G030F6 Datasheet(HTML) 60 Page - STMicroelectronics |
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60 / 94 page ![]() Electrical characteristics STM32G030x6/x8 60/94 DS12991 Rev 1 5.3.14 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 48 are derived from tests performed under the conditions summarized in Table 21: General operating conditions. All I/Os are designed as CMOS- and TTL-compliant. Table 48. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL(1) I/O input low level voltage All VDD(min) < VDDIO1 < 3.6 V - - 0.3 x VDDIO1 (2) V 0.39 x VDDIO1 - 0.06 (3) VIH(1) I/O input high level voltage All VDD(min) < VDDIO1 < 3.6 V 0.7 x VDDIO1( 2) -- V 0.49 x VDDIO1 + 0.26(3) -- Vhys(3) I/O input hysteresis FT_xx, NRST VDD(min) < VDDIO1 < 3.6 V - 200 - mV Ilkg Input leakage current(3) All except FT_e 0 < VIN ≤ VDDIO1 -- ±70 nA VDDIO1 ≤ VIN ≤ VDDIO1+1 V - - 600(4) VDDIO1 +1 V < VIN ≤ 5.5 V(3) - - 150(4) FT_e (5) 0 < VIN < VDDIO1 -- 5 µA RPU Weak pull-up equivalent resistor (6) VIN = VSS 25 40 55 kΩ RPD Weak pull-down equivalent resistor(6) VIN = VDDIO1 25 40 55 kΩ CIO I/O pin capacitance - - 5 - pF 1. Refer to Figure 16: I/O input characteristics. 2. Tested in production. 3. Guaranteed by design. 4. This value represents the pad leakage of the I/O itself. The total product pad leakage is provided by this formula: ITotal_Ileak_max = 10 µA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max). 5. FT_e with diode enabled. Input leakage current of FT_e I/Os with the diode disabled is the same as standard I/Os. 6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). |
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