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STM32G030F6 Datasheet(PDF) 42 Page - STMicroelectronics

Part # STM32G030F6
Description  Arm® Cortex®-M0 32-bit MCU, up to 64 KB Flash, 8 KB RAM, 2x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
PDF  94 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G030F6 Datasheet(HTML) 42 Page - STMicroelectronics

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Electrical characteristics
STM32G030x6/x8
42/94
DS12991 Rev 1
5.3.4
Embedded voltage reference
The parameters given in Table 24 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions.
Vhyst_POR_PDR
Hysteresis of VPOR and VPDR
Hysteresis in
continuous mode
-20
-
mV
Hysteresis in
other mode
-30
-
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
2. Guaranteed by design.
Table 23. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
Table 24. Embedded internal voltage reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
-40°C < TJ < 105°C
1.182 1.212
1.232
V
tS_vrefint (1)
ADC sampling time when reading
the internal reference voltage
-4(2)
--
µs
tstart_vrefint
Start time of reference voltage
buffer when ADC is enable
--
8
12(2)
µs
IDD(VREFINTBUF)
VREFINT buffer consumption from
VDD when converted by ADC
-
-
12.5
20(2)
µA
∆VREFINT
Internal reference voltage spread
over the temperature range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff_vrefint
Temperature coefficient
-
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25 °C
-
300
1000(2)
ppm
VDDCoeff
Voltage coefficient
3.0 V < VDD < 3.6 V
-
250
1200(2)
ppm/V
VREFINT_DIV1
1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2
1/2 reference voltage
49
50
51
VREFINT_DIV3
3/4 reference voltage
74
75
76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.



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