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STM32F103XC Datasheet(PDF) 62 Page - STMicroelectronics |
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STM32F103XC Datasheet(HTML) 62 Page - STMicroelectronics |
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62 / 118 page ![]() Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE 62/118 Table 33. Asynchronous multiplexed SRAM/NOR read timings VDD_IO = V and CL = 15 pF Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time TBD TBD t CK/ns tv(NOE_NE) FSMC_NEx low to FSMC_NOE low TBD TBD t CK/ns tw(NOE) FSMC_NOE low time TBD TBD t CK/ns th(NE_WEN) FSMC_WEN high to FSMC_NE high hold time TBD t CK/ns th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time TBD t CK/ns tv(A_NE) FSMC_NEx low to FSMC_A valid TBD ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low TBD TBD t CK/ns tw(NADV) FSMC_NADV low time TBD TBD t CK/ns th(AD_NADV) FSMC_AD (address) valid hold time after FSMC_NADV high TBD t CK/ns tdis(AD_NADV) FSMC_AD (address) disable time after FSMC_NADV high TBD t CK/ns th(A_NOE) Address hold time after FSMC_NOE high TBD t CK/ns th(BL_NOE) FSMC_BL hold time after FSMC_NOE high TBD t CK/ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid TBD ns tsu(Data_NE) Data to FSMC_NEx high setup time TBD t CK/ns tsu(Data_NOE) Data to FSMC_NOE high setup time TBD t CK/ns th(Data_NE) Data hold time after FSMC_NEx high TBD ns th(Data_NOE) Data hold time after FSMC_NOE high TBD ns |
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