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PIC18F1220E/SOSQTP Datasheet(PDF) 72 Page - Microchip Technology

Part # PIC18F1220E/SOSQTP
Description  18/20/28-Pin High-Performance, Enhanced Flash Microcontrollers
PDF  308 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC18F1220E/SOSQTP Datasheet(HTML) 72 Page - Microchip Technology

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PIC18F1220/1320
DS39605F-page 70
© 2007 Microchip Technology Inc.
7.7
Operation During Code-Protect
Data EEPROM memory has its own code-protect bits in
configuration
words.
External
read
and
write
operations are disabled if either of these mechanisms
are enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect configuration bit. Refer to Section 19.0
“Special Features of the CPU” for additional
information.
7.8
Using the Data EEPROM
The data EEPROM is a high endurance, byte address-
able array that has been optimized for the storage of fre-
quently changing information (e.g., program variables or
other data that are updated often). Frequently changing
values will typically be updated more often than specifi-
cation D124. If this is not the case, an array refresh must
be performed. For this reason, variables that change
infrequently (such as constants, IDs, calibration, etc.)
should be stored in Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
EXAMPLE 7-3:
DATA EEPROM REFRESH ROUTINE
TABLE 7-1:
REGISTERS ASSOCIATED WITH DATA EEPROM MEMORY
Note:
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification D124.
CLRF
EEADR
; Start at address 0
BCF
EECON1, CFGS
; Set for memory
BCF
EECON1, EEPGD
; Set for Data EEPROM
BCF
INTCON, GIE
; Disable interrupts
BSF
EECON1, WREN
; Enable writes
Loop
; Loop to refresh array
BSF
EECON1, RD
; Read current address
MOVLW
55h
;
MOVWF
EECON2
; Write 55h
MOVLW
AAh
;
MOVWF
EECON2
; Write AAh
BSF
EECON1, WR
; Set WR bit to begin write
BTFSC
EECON1, WR
; Wait for write to complete
BRA
$-2
INCFSZ
EEADR, F
; Increment address
BRA
Loop
; Not zero, do it again
BCF
EECON1, WREN
; Disable writes
BSF
INTCON, GIE
; Enable interrupts
Name
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Value on:
POR, BOR
Value on
all other
Resets
INTCON
GIE/GIEH
PEIE/GIEL
TMR0IE
INTE
RBIE
TMR0IF
INTF
RBIF
0000 000x
0000 000u
EEADR
EEPROM Address Register
0000 0000
0000 0000
EEDATA
EEPROM Data Register
0000 0000
0000 0000
EECON2
EEPROM Control Register 2 (not a physical register)
EECON1
EEPGD
CFGS
FREE
WRERR
WREN
WR
RD
xx-0 x000
uu-0 u000
IPR2
OSCFIP
—EEIP
LVDIP
TMR3IP
1--1 -11-
1--1 -11-
PIR2
OSCFIF
—EEIF
LVDIF
TMR3IF
0--0 -00-
0--0 -00-
PIE2
OSCFIE
—EEIE
LVDIE
TMR3IE
0--0 -00-
0--0 -00-
Legend: x = unknown, u = unchanged, – = unimplemented, read as ‘0’. Shaded cells are not used during Flash/EEPROM access.



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