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STM32H723VG Datasheet(PDF) 116 Page - STMicroelectronics

Part # STM32H723VG
Description  32-bit Arm® Cortex®-M7 550 MHz MCU, up to 1 MB Flash memory, 564 KB RAM, 35 comms peripherals and analog interfaces
PDF  227 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H723VG Datasheet(HTML) 116 Page - STMicroelectronics

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Electrical characteristics
STM32H723xE/G
116/227
DS13313 Rev 2
6.3.12
Memory characteristics
Flash memory
The characteristics are given at TJ = –40 to 125 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 42. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode
-
6.5
-
mA
Write / Erase 16-bit mode
-
11.5
-
Write / Erase 32-bit mode
-
20
-
Write / Erase 64-bit mode
-
35
-
Table 43. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
Word (266 bits) programming
time
Program/erase parallelism x 8
-
290
580(2)
µs
Program/erase parallelism x 16
-
180
360
Program/erase parallelism x 32
-
130
260
Program/erase parallelism x 64
-
100
200
tERASE
Sector (128 Kbytes) erase time
Program/erase parallelism x 8
-
2
4
s
Program/erase parallelism x 16
-
1.8
3.6
Program/erase parallelism x 32
-
tME
Mass erase time (1 Mbyte)
Program/erase parallelism x 8
-
3
26
Program/erase parallelism x 16
-
8
16
Program/erase parallelism x 32
-
6
12
Program/erase parallelism x 64
-
5
10
Vprog
Programming voltage
Program parallelism x 8
1.62
-
3.6
V
Program parallelism x 16
Program parallelism x 32
Program parallelism x 64
1.8
-
3.6
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 10K erase operations.
Table 44. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND
Endurance
TJ = –40 to +125 °C
10
kcycles
tRET
Data retention
1 kcycle at TA = 85 °C
30
Years
10 kcycles at TA = 55 °C
20



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