NAND01G-B2C datasheet(52/67 Pages) NUMONYX

Part #	NAND01G-B2C

Description	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

PDF	67 Pages

Scroll/Zoom	100%

Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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52 / 67 page

DC and AC parameters

NAND01G-B2C

52/67

Figure 21.

Command Latch AC waveforms

The time to ready depends on the value of the pull-up resistor tied to the ready/busy pin. See Figure 34, Figure 35 and

Figure 36.

tWHWH is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.

During a program/erase enable operation, tWW is the delay from WP high to W High.

During a program/erase disable Operation, tWW is the delay from WP Low to W High.

tRLQX is valid when frequency is higher than 33 MHz, tRHQX is valid for frequency lower than 33 MHz.

ES = electronic signature.

ai13105

I/O

tCLHWH

tELWH

tWHCLL

tWHEH

tWLWH

tALLWH

tWHALH

Command

tDVWH

tWHDX

(CL Setup time)

(CL Hold time)

(Data Setup time)

(Data Hold time)

(ALSetup time)

(AL Hold time)

H(E Setup time)

(E Hold time)

NAND01G-B2C Datasheet(PDF) 52 Page - Numonyx B.V