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NAND01G-B2C Datasheet(PDF) 21 Page - Numonyx B.V

Part # NAND01G-B2C
Description  1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory
PDF  67 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

NAND01G-B2C Datasheet(HTML) 21 Page - Numonyx B.V

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NAND01G-B2C
Device operations
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6
Device operations
The following section gives the details of the device operations.
6.1
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode the
Read command must be issued, see Table 10: Commands.
Once a Read command is issued two types of operations are available: random read and
page read.
6.1.1
Random read
Each time the Read command is issued the first read is random read.
6.1.2
Page read
After the first random read access, the page data (2112 bytes or 1056 words) is transferred
to the page buffer in a time of tWHBH (refer to Table 25 for value). Once the transfer is
complete the Ready/Busy signal goes High. The data can then be read out sequentially
(from selected column address to last column address) by pulsing the Read Enable signal.
Alternatively, the user may check the transfer completion by issuing the Read Status
Register command and checking SR6 by toggling R. In the latter case, the device will keep
on outputting the read status register until the 00h command is issued.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during cache read operations.



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