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K32W14X Datasheet(PDF) 39 Page - NXP Semiconductors |
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K32W14X Datasheet(HTML) 39 Page - NXP Semiconductors |
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39 / 90 page ![]() Table 39. Flash reliability specifications (continued) Symbol Description Min. Typ.1 Max. Unit Notes Nnvmcyc256 k Sector cycling endurance for 256 KB per array block 100 K 500 K — cycles 3 1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant 25 °C use profile. 2. Sector cycling endurance represents the number of Program/Erase cycles on a single sector at -40 °C ≤ Tj ≤ 125 °C. 3. For devices with a single flash block, sectors must be located within the last 256 KB of the flash main memory. For devices with two flash blocks, sectors must be located within the last 256 KB of each flash main memory. 3.4 Radio modules 3.4.1 2.4 GHz radio transceiver electrical specification Table 40. 2.4 GHz radio transceiver specifications Symbol Characteristic Min. Typ. Max. Unit Notes VDD_RF RF supply voltage 1.175 1.2 3.6 V VPA_2P4 GHZ Supply voltage for 2.4 GHz radio power amplifier 0.9 — 2.4 V 1, 2 fin Input RF frequency 2.360 — 2.4835 GHz fc Output RF frequency 2.360 — 2.4835 GHz Pmax RF input power — — 10 dBm fref Crystal reference oscillator frequency — 32 — MHz ftol Frequency tolerance — ±50 — ppm Trx_tx Rx - Tx turnaround time — 150 — μs 3 1. Voltage required at this rail depends on the desired output power. See Transmit and PLL Feature Summary for the required voltages. 2. VPA_2P4GHZ is internally connected to the VDD_RF pin. When not powered externally, VPA_2P4GHZ = VDD_RF - 0.275 V. An internal regulator prevents VPA_2P4GHZ from going above 2.4 V when powered through the VDD_RF pin. 3. Bluetooth LE. Other modes have different requirements 3.4.2 Receiver Feature Summary Table 41. Top-level Receiver Specifications (TA = 25 °C, nominal process unless otherwise noted) Characteristic1 Symbol Min. Typ. Max. Unit Receiver Active Power Consumption Supply current Rx On with DC-DC converter enable (Buck; VDD_DCDC =3.3 V, VDD_RF=VDD_LDO_CORE = 1.25 V) 2 IRxon — 4.68 — mA Supply current Rx On with DC-DC converter disabled (Bypass, VDD_RF = VDD_LDO_CORE = 3.3. V) 2 IRxon — 10.01 — mA Table continues on the next page... NXP Semiconductors Peripheral operating requirements and behaviors K32W14x Product Family, Rev. 3, 12/2022 Data Sheet: Technical Data General Business Information 39 / 90 |
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