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MB90F474LPF Datasheet(PDF) 110 Page - fujitsu semiconductor |
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MB90F474LPF Datasheet(HTML) 110 Page - fujitsu semiconductor |
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110 / 118 page  MB90470 Series 110 • Use of the X0/X1, X0A/X1A Pins • Sample use of external clock input 6. Flash Memory Program/Erase Characteristics Parameter Conditions Value Unit Remarks Min Typ Max Sector erase time TA = + 25 °C VCC = 3.3 V 1 15 s Excludes 00H programming prior erasure Chip erase time 7 s Excludes 00H programming prior erasure Word (16-bit) programming time 16 3600 µs Excludes system-level overhead Erase/Program cycle 1000 cycle Data hold time 100000 h X1 C2 C3 C4 C1 X0 X0A X1A Pull-up resistance 1 Pull-up resistance 2 Damping resistance 1 Damping resistance 2 Use with a crystal oscillator In normal use (VCC = 2 V or higher) Pull-up resistance 1, 2 Damping resistance 1, 2 C1 to C4 For all pins, consult regarding manufacturer of oscillator. (Sample operation using VCC = 2 V, f = 5 MHz or less) Pull-up resistance 1 = 5.1 kΩ Pull-up resistance 2 = 510 kΩ Damping resistance 1 = 0 Ω Damping resistance 2 = 39 kΩ C1 = C2 = 22 pF C3 = C4 = 30 pF X0 X1 OPEN MB90470 series |
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