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M65KG512AB8W9 Datasheet(PDF) 29 Page - STMicroelectronics |
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M65KG512AB8W9 Datasheet(HTML) 29 Page - STMicroelectronics |
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29 / 54 page ![]() M65KG526AB DC and ac parameters 29/54 Table 14. Self Refresh current (IDD6) in normal operating mode Temperature in °C Memory array(1) Unit All banks 2 banks 1 banks TypMax TypMax TypMax 85 ≤ T J ≤ 105 2.2 1.2 0.8 µA 70 ≤ T J ≤ 85 800 650 490 40 ≤ T J ≤ 70 550 380 290 –30 ≤ T J ≤ 40 300 240 210 1. VDD and VDDQ = 1.7 to 1.9 V, VSS = VSSQ = 0V; KE ≤ 0.2 V. Table 15. AC characteristics(1) - TJ = −30 to 85 °C Symbol Alt Parameter M65KG512AB Unit Min Max tAC (2) Data Output access time from K and K 2.0 6.0 ns tAS (3) tIS Address and Control Input setup time 1.3 ns tAH (3) tIH Address Control Input hold time 1.3 ns tCK Clock Cycle Time 7.5 ns tDAL Autoprecharge write recovery and precharge time tWR+tRP ns tDQSCK (2) UDQS/LDQS access time from K and K 2.0 6.0 ns tDIPW Data Output and LDQM/UDQM inputs pulse width 1.75 ns tDQSHZ (4) UDQS/LDQS High-Z Time from K and K 1.5 6.0 ns tDQSLZ (6) UDQS/LDQS Low-Z time from K and K 1.5 6.0 ns tDQSQ (3) UDQS/LDQS to Data Output skew 0.65 ns tDS (3) Data Input and UDQM/LDQM setup time 0.8 ns tDH (3) Data Input and UDQM/LDQM hold time 0.8 ns tIPW Addresses and control pulse width 3 ns tOHZ (4) tHZ Data Output High-Z time from K and K 1.0 6.0 ns tOLZ (5) tLZ Data Output Low-Z time from K and K 1.0 6.0 ns tQH Data and LDQS/UDQS Output hold time from DQS tHP-tQHS ns tQHS Data hold skew factor 0.75 ns tRAS RAS Active Time (Bank (Row) Activate to Bank Precharge) 45 120000 ns tRC RAS Cycle Time (Bank (Row) Activate to Bank Activate in Auto Refresh mode) 75 ns tRFC RAS Cycle Time (Auto Refresh to Bank Active in Auto Refresh mode) 108 ns tRCD Delay Time, from RAS Active to CAS active 30 ns tRRD Delay Time, from RAS Active to RAS Bank active 15 ns |
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