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PCIMX258CJM4A Datasheet(PDF) 24 Page - Freescale Semiconductor, Inc |
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PCIMX258CJM4A Datasheet(HTML) 24 Page - Freescale Semiconductor, Inc |
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24 / 144 page ![]() i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 3 24 Freescale Semiconductor 1. Simulation circuit for parameters Voh and Vol for I/O cells is below 2. Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled. 3. Minimum condition: bcs model, OVDD = 3.6 V / 1.95 V and –40 °C. Typical condition: typical model, OVDD = 3.3 V / 1.8 V, and 25 °C. Maximum condition: wcs model, OVDD = 3.0 V, and 105 °C. 4. Typical condition: typical model, OVDD=3.3 V / 1.8 V, and 25 °C. Maximum condition: bcs model, OVDD=3.6 V / 1.95 V, and 105 °C. 3.6 AC Electrical Characteristics This section provides the AC parameters for slow and fast I/O. Figure 3 shows the load circuit for output. Figure 4 through Figure 6 show the output transition time and propagation waveforms. Figure 3. Load Circuit for Output Input current (47 k Ω PU) IIN VI = 0, OVDD = 3.3 V VI = OVDD = 3.3 V VI = 0, OVDD = 1.8 V VI = OVDD = 1.8 V 54 0.0001 30 0.0001 —88 0.0001 49 0.0001 μA4 Input current (100 k Ω PU) IIN VI = 0, OVDD = 3.3 V VI = OVDD = 3.3 V VI = 0, OVDD = 1.8 V VI = OVDD = 1.8 V 25 0.0001 14 0.0001 —42 0.0001 23 0.0001 μA Input current (100 k Ω PD) IIN VI = 0, OVDD = 3.3 V VI = OVDD = 3.3 V VI = 0, OVDD = 1.8 V VI = OVDD = 1.8 V 25 0.0001 14 0.0001 —42 0.001 23 0.0001 μA High-impedance I/O supply current Icc–ovdd VI = 0, OVDD = 3.3 V VI = OVDD = 3.3 V VI = 0, OVDD = 1.8 V VI = OVDD = 1.8 V —— 688 688 560 560 nA 4 High-impedance core supply current Icc–vddi VI = 0, OVDD = 3.3 V VI = OVDD = 3.3 V VI = 0, OVDD = 1.8 V VI = OVDD = 1.8 V —— 490 490 410 410 nA Table 18. GPIO DC Electrical Characteristics (continued) DC Electrical Characteristics Symbol Test Conditions Min. Typ. Max. Units Notes Test Point From Output Under Test CL CL includes package, probe and jig capacitance |
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