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PCIMX258CJM4A Datasheet(PDF) 20 Page - Freescale Semiconductor, Inc |
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PCIMX258CJM4A Datasheet(HTML) 20 Page - Freescale Semiconductor, Inc |
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20 / 144 page ![]() i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 3 20 Freescale Semiconductor 3.5.1.1 DDR_TYPE = 00 Standard Setting DDR I/O DC Parameters Table 15 shows the I/O parameters for mobile DDR. These settings are suitable for mDDR and DDR2 1.8V ( ± 5%) applications. Note: 1. Simulation circuit for parameters Voh and Vol for I/O cells is below 2. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: wcs model, 1.65 V, and 105 °C. 3. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C. Table 15. Mobile DDR I/O DC Electrical Characteristics DC Electrical Characteristics Symbol Test Conditions Min. Typ. Max. Units Notes High-level output voltage Voh IOH = –1mA IOH = Specified Drive OVDD – 0.08 0.8 × OVDD —— V 1 Low-level output voltage Vol IOL = 1mA IOL = Specified Drive — — 0.08 0.2 × OVDD V High-level output current I Ioh Voh = 0.8 × OVDDV Standard Drive High Drive Max. Drive –3.6 –7.2 –10.8 —— mA — Low-level output current I Iol Vol = 0.2 × OVDDV Standard Drive High Drive Max. Drive 3.6 7.2 10.8 —— mA — High-level DC CMOS input voltage VIH — 0.7 × OVDD OVDD OVDD+0.3 V — Low-level DC CMOS input voltage VIL — –0.3 0 0.3 × OVDD V Differential receiver VTH+ VTH+ — — 100 mV Differential receiver VTH- VTH- –100 — — mV Input current (no pull-up/down) IIN VI = 0 VI = OVDD — — 110 60 nA 2, 3 High-impedance I/O supply current Icc-ovdd VI = OVDD or 0 — — 990 nA 2, 3 High-impedance core supply current Icc-vddi VI = VDD or 0 — — 1220 nA |
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