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PCIMX258CJM4A Datasheet(PDF) 20 Page - Freescale Semiconductor, Inc

Part # PCIMX258CJM4A
Description  i.MX25 Applications Processor for Consumer and Industrial Products
PDF  144 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

PCIMX258CJM4A Datasheet(HTML) 20 Page - Freescale Semiconductor, Inc

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i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 3
20
Freescale Semiconductor
3.5.1.1
DDR_TYPE = 00 Standard Setting DDR I/O DC Parameters
Table 15 shows the I/O parameters for mobile DDR. These settings are suitable for mDDR and DDR2
1.8V (
± 5%) applications.
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
wcs model, 1.65 V, and 105 °C.
3. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C.
Table 15. Mobile DDR I/O DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Notes
High-level output voltage
Voh
IOH = –1mA
IOH = Specified
Drive
OVDD – 0.08
0.8
× OVDD
——
V
1
Low-level output voltage
Vol
IOL = 1mA
IOL = Specified
Drive
—
—
0.08
0.2
× OVDD
V
High-level output current
I
Ioh
Voh = 0.8
×
OVDDV
Standard Drive
High Drive
Max. Drive
–3.6
–7.2
–10.8
——
mA
—
Low-level output current
I
Iol
Vol = 0.2
× OVDDV
Standard Drive
High Drive
Max. Drive
3.6
7.2
10.8
——
mA
—
High-level DC CMOS input voltage
VIH
—
0.7
× OVDD
OVDD
OVDD+0.3
V
—
Low-level DC CMOS input voltage
VIL
—
–0.3
0
0.3
× OVDD
V
Differential receiver VTH+
VTH+
—
—
100
mV
Differential receiver VTH-
VTH-
–100
—
—
mV
Input current (no pull-up/down)
IIN
VI = 0
VI = OVDD
—
—
110
60
nA
2, 3
High-impedance I/O supply current
Icc-ovdd
VI = OVDD or 0
—
—
990
nA
2, 3
High-impedance core supply current
Icc-vddi
VI = VDD or 0
—
—
1220
nA



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