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PCIMX258CJM4A Datasheet(PDF) 66 Page - Freescale Semiconductor, Inc |
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PCIMX258CJM4A Datasheet(HTML) 66 Page - Freescale Semiconductor, Inc |
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66 / 144 page ![]() i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 3 66 Freescale Semiconductor Figure 33. DDR2 SDRAM DQ vs. DQS and SDCLK READ Cycle Timing Diagram DQ Slew Rate V/ns 2.0 188 188 167 146 125 63 ———— ———————— 1.5 146 167 125 125 83 42 81 43 — — ———————— 1.0 63 125 42 83 0 0 –2 1 –7 –13 ———————— 0.9 — — 31 69 –11 –14 –13 –13 –18 –27 –29 –45 —————— 0.8 ———— –25 –31 –27 –30 –32 –44 –43 –62 –60 –86 ———— 0.7 ————— — –45 –53 –50 –67 –61 –85 –78 –109 –108 –152 — — 0.6 ————— ——— –74 –96 –85 –114 –102 –138 –132 –181 –183 –246 0.5 ————— ————— –128 –156 –145 –180 –175 –223 –226 –288 0.4 ————— ————— — — –210 –243 –240 –286 –291 –351 1 All units in ‘ps’. 2 Test conditions are at capacitance=15pF for DDR PADS. Recommended drive strengths are medium for SDCLK and high for address and controls. 3 SDRAM CLK and DQS related parameters are measured from the 50% point. That is, high is defined as 50% of the signal value, and low is defined as 50% of the signal value. DDR SDRAM CLK parameters are measured at the crossing point of SDCLK and SDCLK (inverted clock). Table 52. DDR2 SDRAM Read Cycle Parameter Table1,2 1 Test conditions are at capacitance=15 pF for DDR PADS. Recommended drive strengths are medium for SDCLK and high for address and controls. ID Parameter Symbol DDR2-400 Unit Min. Max. DDR24 DQS - DQ Skew (defines the Data valid window in read cycles related to DQS) tDQSQ —0.35 ns DDR25 DQS DQ in HOLD time from DQS3 tQH 2.925 — ns DDR26 DQS output access time from SDCLK posedge tDQSCK –0.5 0.5 ns Table 51. ΔtDS1, ΔtDH1 Derating Values for DDR2-400, DDR2-5331,2,3 (continued) DQS Single-Ended Slew Rate SDCLK SDCLK_B DQS (input) DQ (input) DATA DATA DATA DATA DATA DATA DATA DATA DDR26 DDR24 DDR25 |
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