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MPC5125 Datasheet(PDF) 37 Page - Freescale Semiconductor, Inc |
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MPC5125 Datasheet(HTML) 37 Page - Freescale Semiconductor, Inc |
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37 / 92 page ![]() Electrical and Thermal Characteristics MPC5125 Microcontroller Data Sheet, Rev. 3 Freescale Semiconductor 37 4.1.3 DC Electrical Specifications Table 6 gives the DC electrical characteristics for the MPC5125 at recommended operating conditions. Supply voltage — standard I/O buffers VDD_IO 3.0 3.3 3.6 V D2.3 Supply voltage — memory I/O buffers (DDR) VDD_IO_MEM_DDR 2.3 2.5 2.7 V D2.4 Supply voltage — memory I/O buffers (DDR2, LPDDR, Mobile SDR) VDD_IO_MEM_DDR2 VDD_IO_MEM_LPDDR 1.7 1.8 1.9 V D2.5 Supply voltage — memory I/O buffers (SDR) VDD_IO_MEM_SDR 3.0 3.3 3.6 V D2.19 Input reference voltage (DDR/DDR2) MVREF 0.49 × VDD_IO_MEM 0.50 × VDD_IO_MEM 0.51 × VDD_IO_MEM VD2.6 Termination voltage (DDR2) MVTT MVREF – 0.04 MVREF MVREF + 0.04 VD2.7 Supply voltage — system APLL AVDD_SPLL 3.0 3.3 3.6 V D2.8 Supply voltage — system oscillator and temperature sensor AVDD_OSC_TMPS 3.0 3.3 3.6 V D2.9 Supply voltage — e300 APLL AVDD_CPLL 3.0 3.3 3.6 V D2.10 Supply voltage — RTC (hibernation) VBAT 3 3.0 3.3 3.6 V D2.11 Supply voltage — FUSE programming AVDD_FUSEWR 3.0 3.3 3.6 V D2.12 Input voltage — standard I/O buffers Vin 0— VDD_IO V D2.14 Input voltage — memory I/O buffers (DDR) Vin_DDR 0 — VDD_IO_ MEM_DDR V D2.15 Input voltage — memory I/O buffers (DDR2) Vin_DDR2 0 — VDD_IO_ MEM_DDR2 V D2.16 Input voltage — memory I/O buffers (SDR) Vin_SDR 0 — VDD_IO_ MEM_SDR V D2.20 Input voltage — memory I/O buffers (LPDDR) Vin_LPDDR 0 — VDD_IO_ MEM_LPDDR V D2.18 Ambient operating temperature range TA –40 — +85 oC D2.17 NOTES: 1 These are recommended and tested operating conditions. Proper device operation outside these conditions is not guaranteed. 2 The State Retention voltage can be applied to VDD after the device is placed in deep-sleep mode. 3 VBAT should not be supplied by a battery of voltage less than 3.0 V. Table 6. DC Electrical Specifications Characteristic Condition Sym Min Max Unit SpecID Input high voltage Input type = TTL VDD_IO VIH 0.51 × V DD_IO —V D3.1 Input high voltage Input type = TTL VDD_IO_MEM_DDR VIH MVREF + 0.15 — V D3.2 Table 5. Recommended Operating Conditions (continued) Characteristic Sym Min1 Typ Max1 Unit SpecID |
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