PIC16C72-04SLASHSP datasheet(80/124 Pages) MICROCHIP

80 / 124 page

PIC16C72 Series

DS39016A-page 80

Preliminary

13.2

DC Characteristics:

PIC16LC72/LCR72-04 (Commercial, Industrial)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40˚C

≤ TA ≤ +85˚C for industrial and

0˚C

≤ TA ≤ +70˚C for commercial

Param

No.

Characteristic

Sym

PIC16C72

PIC16CR72

Units

Conditions

Min

Typ†

Max

Min

Typ†

Max

D001

Supply Voltage

VDD

2.5

6.0

2.5

5.5

LP, XT, RC (DC - 4 MHz)

D002*

RAM Data Retention

Voltage (Note 1)

VDR

1.5

D003

VDD start voltage to

ensure internal Power-

on Reset signal

VPOR

VSS

See section on Power-

on Reset for details

D004*

VDD rise rate to ensure

internal Power-on

Reset signal

SVDD

0.05

V/ms

See section on Power-

on Reset for details

D005

Brown-out Reset Volt-

age

Bvdd

3.7

4.0

4.3

3.7

4.0

4.3

BODEN bit in conﬁgura-

tion word enabled

D010

Supply Current

(Note 2,5)

IDD

2.0

3.8

2.0

3.8

XT, RC osc conﬁguration

FOSC = 4 MHz, VDD =

3.0V (Note 4)

D010A

22.5

µA

LP osc conﬁguration

FOSC = 32 kHz, VDD =

3.0V, WDT disabled

D015*

Brown-out Reset

Current (Note 6)

∆Ibor

350

425

350

425

µA

BOR enabled VDD =

5.0V

D020

Power-down Current

(Note 3,5)

IPD

7.5

µA

VDD = 3.0V, WDT

enabled, -40

°C to +85°C

D021

0.9

µA

VDD = 3.0V, WDT dis-

abled, 0

°C to +70°C

D021A

0.9

µA

VDD = 3.0V, WDT dis-

abled, -40

°C to +85°C

D023*

Brown-out Reset

Current (Note 6)

∆Ibor

350

425

350

425

µA

BOR enabled VDD =

5.0V

These parameters are characterized but not tested.

†

Data in "Typ" column is at 5V, 25˚C unless otherwise stated. These parameters are for design guidance only and are not

tested.

Note 1:

This is the limit to which VDD can be lowered without losing RAM data.

Note 2:

The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD

MCLR = VDD; WDT enabled/disabled as speciﬁed.

Note 3:

The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with

the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.

Note 4:

For RC osc conﬁguration, current through Rext is not included. The current through the resistor can be estimated by the

formula Ir = VDD/2Rext (mA) with Rext in kOhm.

Note 5:

Timer1 oscillator (when enabled) adds approximately 20

µA to the speciﬁcation. This value is from characterization and

is for design guidance only. This is not tested.

Note 6:

The

∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the

base IDD or IPD measurement.

PIC16C72-04/SP Datasheet(PDF) 80 Page - Microchip Technology

PIC16C72-04/SP Datasheet(HTML) 80 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL