M38B53M4-059FP datasheet(83/355 Pages) MITSUBISHI

83 / 355 page

38B5 Group User’s Manual

1-67

HARDWARE

MASK OPTION OF PULL-DOWN RESISTOR

(object product: M38B5XMXH-XXXFP)

Whether built-in pull-down resistors are connected or not to high-

breakdown voltage ports P20 to P27 and P80 to P83 can be specified

in ordering mask ROM. The option type can be specified from among

8 types; A to G, P as shown Table 12.

Table 12 Mask option type of pull-down resistor

A ($41)

B ($42)

C ($43)

D ($44)

E ($45)

F ($46)

G ($47)

Connective port of pull-down resistor

(connected at “1” writing)

P20 P21 P22 P23 P24 P25 P26 P27 P80 P81 P82 P83

Notes 1: The electrical characteristics of high-breakdown voltage ports

P20 to P27 and P80 to P83’s built-in pull-down resistors are the

same as that of high-breakdown voltage ports P00 to P07.

2: The absolute maximum ratings of power dissipation may be

exceed owing to the number of built-in pull-down resistor. After

calculating the power dissipation, specify the option type.

3: One time PROM version and EPROM version cannot be

specified whether built-in pull-down resistors are connected or not

likewise option type A.

4: INT3 function and CNTR1 function cannot be used in the option

type P.

Power Dissipation Calculating Method

q Fixed number depending on microcomputer’s standard

• VOH output fall voltage of high-breakdown port

2 V (max.); | Current value | = at 18 mA

• Resistor value 43 V / 900

µA = 48 kΩ (min.)

• Power dissipation of internal circuit (CPU, ROM, RAM etc.) = 5 V !

15 mA = 75 mW

q Fixed number depending on use condition

• Apply voltage to VEE pin: Vcc – 45 V

• Timing number a; digit number b; segment number c

• Ratio of Toff time corresponding Tdisp time: 1/16

• Turn ON segment number during repeat cycle: d

• All segment number during repeat cycle: c (= a ! c)

• Total number of built-in resistor: for digit; f, for segment; g

• Digit pin current value h (mA)

• Segment pin current value i (mA)

(1) Digit pin power dissipation

{h ! b ! (1–Toff/Tdisp) ! voltage} / a

(2) Segment pin power dissipation

{i ! d ! (1–Toff/Tdisp) ! voltage} / a

(3) Pull-down resistor power dissipation (digit)

{power dissipation per 1 digit ! (b ! f / b) ! (1–Toff/Tdisp) } / a

(4) Pull-down resistor power dissipation (segment)

{power dissipation per 1 segment ! (d ! g / c) ! (1–Toff/Tdisp) } / a

(5) Internal circuit power dissipation (CPU, ROM, RAM etc.) = 75 mW

(1) + (2)+ (3) + (4) + (5) = X mW

Power Dissipation Calculating example 1

q Fixed number depending on microcomputer’s standard

• VOH output fall voltage of high-breakdown port

2 V (max.); | Current value | = at 18 mA

• Resistor value 43 V / 900

µA = 48 kΩ (min.)

• Power dissipation of internal circuit (CPU, ROM, RAM etc.) = 5 V !

15 mA = 75 mW

q Fixed number depending on use condition

• Apply voltage to VEE pin: Vcc – 45 V

• Timing number 17; digit number 16; segment number 20

• Ratio of Toff time corresponding Tdisp time: 1/16

• Turn ON segment number during repeat cycle: 31

• All segment number during repeat cycle: 340 (= 17 ! 20)

• Total number of built-in resistor: for digit; 16, for segment; 20

• Digit pin current value: 18 (mA)

• Segment pin current value: 3 (mA)

(1) Digit pin power dissipation

{18 ! 16 ! (1–1/16) ! 2} / 17 = 31.77 mW

(2) Segment pin power dissipation

{3 ! 31 ! (1–1/16) ! 2} / 17 = 10.26 mW

(3) Pull-down resistor power dissipation (digit)

(45 – 2)2 /48 ! (16 ! 16/16) ! (1 – 1/16) / 17 = 33.99 mW

(4) Pull-down resistor power dissipation (segment)

(45 – 2)2 /48 ! (31 ! 20/20) ! (1 – 1/16) / 17 = 65.86 mW

(5) Internal circuit power dissipation (CPU, ROM, RAM etc.) = 75 mW

(1) + (2)+ (3) + (4) + (5) = 217 mW

Fig. 76 Digit timing waveform (1)

MASK OPTION OF PULL-DOWN RESISTOR

DIG0

DIG1

DIG2

DIG3

DIG14

DIG15

DIG16

Timing number

1617

Tscan

Repeat cycle

Option

type

Restriction

P ($50)

(Note 4)

M38B53M4-059FP Datasheet(PDF) 83 Page - Mitsubishi Electric Semiconductor

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