ZAMC4100GA2R datasheet(107/156 Pages) RENESAS

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ZAMC4100 Datasheet

107

January 26, 2016

4.2.3.

INFO Area

The INFO area is mapped into the system address space between 0x4000_0C00 and 0x4000_0FFF. No memory

location in the INFO pages can be directly written. The INFO area contains two pages of 512 bytes each:

•

INFO page 0 (lower half of addresses) contains traceability information and trimming values for SBC

analog circuitry (see section 3.15). This page is only readable and cannot be accessed indirectly by the

flash controller (no WRITE, no ERASE). The INFO page 0 base address is 0x4000_0C00.

•

INFO page 1 (upper half of addresses) is a mirror copy of INFO page 0 for redundancy of INFO page

data content.

Table 4.2

INFO Page 0 Structure

Offset

Size

Description

0x00000000 to 0x0000003C

Traceability data

0x00000040

1 word

SBC Trim Data

0x00000044 to 0x000000C0

Reserved

0x000000C4

1 word

Exact value for IREF (see Table 1.12)

Note: The number stored represents IREF in nA.

0x000000C8

1 word

Exact value for VREF (see Table 1.12)

Note: The number stored represents VREF in mV.

0x000000CC

1 word

Exact value for Vt27 (see Table 1.11)

Note: The number stored represents Vt27 in mV.

0x000000D0

1 word

Exact current sense ratio for HS1 (see Table 1.8)

0x000000D4

1 word

Exact current sense ratio for HS2 (see Table 1.8)

0x000000D8

1 word

Exact current sense ratio for HS3 (see Table 1.8)

0x000000DC

1 word

Exact current sense ratio for HS4 (see Table 1.8)

0x000000E0

1 word

Exact current sense ratio for HB1 high-side (see Table 1.8)

0x000000E4

1 word

Exact current sense ratio for HB1 low-side (see Table 1.8)

0x000000E8

1 word

Exact current sense ratio for HB2 high-side (see Table 1.8)

0x000000EC

1 word

Exact current sense ratio for HB2 low-side (see Table 1.8)

0x000000F0

1 word

Exact current sense ratio for HB3 high-side (see Table 1.8)

0x000000F4

1 word

Exact current sense ratio for HB3 low-side (see Table 1.8)

0x000000F8

1 word

Exact current sense ratio for HB4 high-side (see Table 1.8)

0x000000FC

1 word

Exact current sense ratio for HB4 low-side (see Table 1.8)

4.2.4.

RAM Memory 2kB

The SRAM is physically located at addresses 0x2000_0000 to 0x2000_07FF. It can be accessed (READ and

WRITE) with byte, half-word, and word size. The SRAM can also be mirrored to address 0x0000_0000 by setting

the MEMSWAP bit in register SYS_MEMPORTCFG (see Table 4.6).

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