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P87LPC778FDH Datasheet(PDF) 69 Page - NXP Semiconductors |
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P87LPC778FDH Datasheet(HTML) 69 Page - NXP Semiconductors |
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69 / 79 page ![]() Philips Semiconductors P87LPC778 CMOS single-chip 8-bit microcontroller Product data Rev. 01 — 31 March 2004 69 of 79 9397 750 12378 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9. Limiting values [1] Stresses above those listed under Table 66 “Limiting values” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions other than those described in Table 67 “DC electrical characteristics” and Table 69 “AC electrical characteristics” of this specification are not implied. [2] This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum. [3] Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless otherwise noted. Table 66: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tamb(bias) operating bias ambient temperature −55 +85 °C Tstg storage temperature range −65 +150 °C VRST voltage on RST/VPP pin to VSS - +11.0 V Vn voltage on any other pin to VSS −0.5 VDD + 0.5 V IOL(I/O) LOW-level output current per I/O pin - 50 mA IOH(I/O) HIGH-level output current per I/O pin - −50 mA IOL(tot)(max) maximum total IOL for all outputs - 200 mA IOH(tot)(max) maximum total IOH for all outputs - −200 mA Ptot(pack) total power dissipation per package based on package heat transfer, not device power consumption - 1.5 W |
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