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S29GL01GS10DFIV13 Datasheet(PDF) 101 Page - Cypress Semiconductor

Part # S29GL01GS10DFIV13
Description  1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
PDF  108 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S29GL01GS10DFIV13 Datasheet(HTML) 101 Page - Cypress Semiconductor

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Document Number: 001-98285 Rev. *R
Page 101 of 108
S29GL01GS/S29GL512S
S29GL256S/S29GL128S
The ordering part number for the General Market device is formed by a valid combination of the following:
Note:
1. Halogen-free definition is in accordance with IEC 61249-2-21 specification.
S29GL01GS
10
D
H
I
01
0
Packing Type
0 = Tray
3 = 13” Tape and Reel
Model Number (VIO and VCC Range)
01 = VIO = VCC = 2.7 to 3.6V, highest address sector protected
02 = VIO = VCC = 2.7 to 3.6V, lowest address sector protected
V1 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6V, highest address sector protected
V2 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6V, lowest address sector protected
Temperature Range / Grade
I = Industrial (-40 °C to +85 °C)
V = Industrial Plus (-40 °C to +105 °C)
A = Automotive, AEC-Q100 Grade 3 (-40 °C to +85 °C)
B = Automotive, AEC-Q100 Grade 2 (-40 °C to +105 °C)
Package Materials Set
A = Leaded (Sn/Pb) balls - BGA only
F = Halogen-free, Lead (Pb)-free (1)
H = Halogen-free, Lead (Pb)-free (1)
Package Type
D = Fortified Ball-Grid Array Package (LAE064) 9 mm x 9 mm
F = Fortified Ball-Grid Array Package (LAA064) 13 mm x 11 mm
G = Fortified Ball-Grid Array Package (VBU056) 9 mm x 7 mm
S = 70-pin Shrink Small Outline Package
T = Thin Small Outline Package (TSOP) Standard Pinout
Speed Option
90 = 90 ns random access time
10 = 100 ns random access time
11 = 110 ns random access time
12 = 120 ns random access time
Device Number/Description
S29GL01GS, S29GL512S, S29GL256S, S29GL128S
3.0 Volt Core, with VIO Option, 1024, 512, 256, 128 Megabit Page-Mode Flash Memory,
Manufactured on 65 nm MirrorBit Eclipse Process Technology



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