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S29GL01GS10DFIV13 Datasheet(PDF) 101 Page - Cypress Semiconductor |
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S29GL01GS10DFIV13 Datasheet(HTML) 101 Page - Cypress Semiconductor |
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101 / 108 page ![]() Document Number: 001-98285 Rev. *R Page 101 of 108 S29GL01GS/S29GL512S S29GL256S/S29GL128S The ordering part number for the General Market device is formed by a valid combination of the following: Note: 1. Halogen-free definition is in accordance with IEC 61249-2-21 specification. S29GL01GS 10 D H I 01 0 Packing Type 0 = Tray 3 = 13” Tape and Reel Model Number (VIO and VCC Range) 01 = VIO = VCC = 2.7 to 3.6V, highest address sector protected 02 = VIO = VCC = 2.7 to 3.6V, lowest address sector protected V1 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6V, highest address sector protected V2 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6V, lowest address sector protected Temperature Range / Grade I = Industrial (-40 °C to +85 °C) V = Industrial Plus (-40 °C to +105 °C) A = Automotive, AEC-Q100 Grade 3 (-40 °C to +85 °C) B = Automotive, AEC-Q100 Grade 2 (-40 °C to +105 °C) Package Materials Set A = Leaded (Sn/Pb) balls - BGA only F = Halogen-free, Lead (Pb)-free (1) H = Halogen-free, Lead (Pb)-free (1) Package Type D = Fortified Ball-Grid Array Package (LAE064) 9 mm x 9 mm F = Fortified Ball-Grid Array Package (LAA064) 13 mm x 11 mm G = Fortified Ball-Grid Array Package (VBU056) 9 mm x 7 mm S = 70-pin Shrink Small Outline Package T = Thin Small Outline Package (TSOP) Standard Pinout Speed Option 90 = 90 ns random access time 10 = 100 ns random access time 11 = 110 ns random access time 12 = 120 ns random access time Device Number/Description S29GL01GS, S29GL512S, S29GL256S, S29GL128S 3.0 Volt Core, with VIO Option, 1024, 512, 256, 128 Megabit Page-Mode Flash Memory, Manufactured on 65 nm MirrorBit Eclipse Process Technology |
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