H8SLASH3021 datasheet(496/712 Pages) RENESAS

496 / 712 page

15. ROM

Rev.2.00 Mar. 22, 2007 Page 472 of 684

REJ09B0352-0200

15.7

Programming/Erasing Flash Memory

A software method, using the CPU, is employed to program and erase flash memory in the on-

board programming modes. There are four flash memory operating modes: program mode, erase

mode, program-verify mode, and erase-verify mode. Transitions to these modes are made by

setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1.

The flash memory cannot be read while it is being written or erased. Install the program to control

flash memory programming and erasing (programming control program) in on-chip RAM or

external memory, and execute the program from there.

See section 15.11, Notes on Flash Memory Programming/Erasing, for points to be noted when

programming or erasing the flash memory. In the following operation descriptions, wait times

after setting or clearing individual bits in FLMCR1 are given as parameters; for details of the wait

times, see section 18.2.5, Flash Memory Characteristics.

Notes: 1. Operation is not guaranteed if bits SWE, ESU, PSU, EV, PV, E, and P of FLMCR1 are

set/reset by a program in flash memory in the corresponding address areas.

2. When programming or erasing, set FWE to 1 (programming/erasing will not be

executed if FWE = 0).

3. Programming should be performed in the erased state. Do not perform additional

programming on previously programmed addresses.

H8/3021 Datasheet(PDF) 496 Page - Renesas Technology Corp