| Electronic Components Datasheet Search |
|
H8/3021 Datasheet(PDF) 495 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
H8/3021 Datasheet(HTML) 495 Page - Renesas Technology Corp |
|
495 / 712 page ![]() 15. ROM Rev.2.00 Mar. 22, 2007 Page 471 of 684 REJ09B0352-0200 FWE=high (user program mode) Branch to program in RAM. Transfer on-board programming program to RAM. Reset start MD2 to MD0 = 101, 110, 111 Execute on-board programming program in RAM (flash memory reprogramming). Input low level to FWE after SWE bit clear (user program mode exit) Execute user application program in flash memory. <Procedure> The user writes a program that executes steps 3 to 8 in advance as shown below . Sets the mode pin to an on-chip ROM enable mode (mode 5, 6, or 7). Starts the CPU via reset. (The CPU can also be started from the user program mode by setting the FWE pin to High level during reset; that is, during the period the RES pin is a low level.*1) Transfers the on-board programming program to RAM. Branches to the program in RAM. Sets the FWE pin to a high level. *2 (Switches to user program mode.) After confirming that the FWE pin is a high level, executes the on-board programming program in RAM. This reprograms the user application program in flash memory. At the end of reprograming, clears the SWE bit, and exits the user program mode by switching the FWE pin from a high level to a low level. *3 Branches to, and executes, the user application program reprogrammed in flash memory. 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 Notes: 1. Normally do not apply a high level to the FWE pin. To prevent erroneous programming or erasing in the event of program runaway, etc., apply a high level to the FWE pin only when programming/erasing flash memory (including flash memory emulation by RAM). If program runaway, etc. causes overprogramming or overerasing of flash memory, the memory cells will not operate normally. Also, while a high level is applied to the FWE pin, the watchdog timer should be activated to prevent overprogramming or overerasing due to program runaway, etc. 2. For notes on FWE pin High/Low, see section 15.11, Notes on Flash Memory Programming/Erasing. 3. In order to execute a normal read of flash memory in user program mode, the program/erase program must not be executing. It is thus necessary to ensure that bits 6 to 0 in FLMCR1 are cleared to 0. Figure 15.9 User Program Mode Execution Procedure (Example) |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |