ATO25F1GC-30EC datasheet(38/46 Pages) ETC

38 / 46 page

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Sep.2013. Rev 0.5

1Gbit Serial NAND Flash Memory

Initial delivery state

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains

FFh). The Status Register contains 00h (all Status Register bits are 0).

Maximum rating

Stressing the device above the rating listed in the absolute maximum ratings table may cause

permanent damage to the device. These are stress ratings only and operation of the device at

these or any other conditions above those indicated in the operating sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability. Refer also to relevant quality documents.

Table 8. Absolute maximum ratings

Symbol

Parameter

Min.

Max.

Unit

TSTG

Storage temperature

–65

150

°C

TLEAD

Lead temperature during soldering

see (0)

°C

VIO

Input and output voltage (with respect to ground)

–0.6

VCC + 0.4

VCC

Supply voltage

–0.6

4.6

VESD

Electrostatic discharge voltage (Human Body model)

(1)

–2000

2000

0. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly)

1. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)

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