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MSP430F14X Datasheet(PDF) 31 Page - Texas Instruments

Part # MSP430F14X
Description  MSP430F14x, MSP430F14x1, MSP430F13x Mixed-Signal Microcontrollers
PDF  83 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

MSP430F14X Datasheet(HTML) 31 Page - Texas Instruments

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31
MSP430F149, MSP430F148, MSP430F147
MSP430F1491, MSP430F1481, MSP430F1471
MSP430F135, MSP430F133
www.ti.com
SLAS272H – JULY 2000 – REVISED MAY 2018
Submit Documentation Feedback
Product Folder Links: MSP430F149 MSP430F148 MSP430F147 MSP430F1491 MSP430F1481 MSP430F1471
MSP430F135 MSP430F133
Specifications
Copyright © 2000–2018, Texas Instruments Incorporated
(1)
The sensor current ISENSOR is consumed if (ADC12ON = 1 and REFON = 1), or (ADC12ON = 1 AND INCH = 0Ah and sample signal is
high). Therefore, it includes the constant current through the sensor and the reference.
(2)
Not production tested, limits characterized
(3)
The typical equivalent impedance of the sensor is 51 k
Ω. The sample time required includes the sensor on-time, tSENSOR(on).
(4)
No additional current is needed. The VMID is used during sampling.
(5)
N/A = Not applicable
(6)
The on-time tVMID(on) is included in the sampling time tVMID(sample); no additional on time is needed.
5.28 12-Bit ADC, Temperature Sensor and Built-In VMID
over recommended operating supply voltage and free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
ISENSOR
Operating supply current into
AVCC terminal
(1)
REFON = 0, INCH = 0Ah,
ADC12ON = N/A, TA = 25°C
2.2 V
40
120
µA
3 V
60
160
VSENSOR
Sensor output voltage(2)
ADC12ON = 1, INCH = 0Ah,
TA = 0°C
2.2 V
986
986 ±5%
mV
3 V
986
986 ±5%
TCSENSOR
Temperature coefficient of
sensor output voltage(2)
ADC12ON = 1, INCH = 0Ah
2.2 V
3.55
3.55 ±3%
mV/°C
3 V
3.55
3.55 ±3%
tSENSOR(sample)
Sample time required if
channel 10 is selected(2)(3)
ADC12ON = 1, INCH = 0Ah,
Error of conversion result
≤ 1 LSB
2.2 V
30
µs
3 V
30
IVMID
Current into divider at
channel 11 (4)
ADC12ON = 1, INCH = 0Bh
2.2 V
N/A(5)
µA
3 V
N/A
VMID
AVCC divider at channel 11
ADC12ON = 1, INCH = 0Bh,
VMID ≈ 0.5 × VAVCC
2.2 V
1.1
1.1 ±0.04
V
3 V
1.5
1.5 ±0.04
tVMID(sample)
Sample time required if
channel 11 is selected(6)
ADC12ON = 1, INCH = 0Bh,
Error of conversion result
≤ 1 LSB
2.2 V
1400
ns
3 V
1220
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word or byte write and block write modes.
(2)
The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297 × 1/fFTG, maximum = 5297 × 1/476 kHz).
To achieve the required cumulative mass erase time the flash controller mass erase operation can be repeated until this time is met. A
worst case minimum of 19 cycles are required.
(3)
These values are hardwired into the flash controller state machine (tFTG = 1/fFTG).
5.29 Flash Memory
over recommended operating supply voltage and free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCC(PGM/ERASE)
Program and erase supply voltage
2.7
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from DVCC during program
VCC = 2.7 V or 3.6 V
3
5
mA
IERASE
Supply current from DVCC during erase
VCC = 2.7 V or 3.6 V
3
7
mA
tCPT
Cumulative program time(1)
VCC = 2.7 V or 3.6 V
4
ms
tCMErase
Cumulative mass erase time(2)
VCC = 2.7 V or 3.6 V
200
ms
Program and erase endurance(3)
104
105
cycles
tRetention
Data retention duration(3)
TJ = 25°C
100
years
tWord
Word or byte program time(3)
35
tFTG
tBlock, 0
Block program time for first byte or word(3)
30
tFTG
tBlock, 1-63
Block program time for each additional byte or word(3)
21
tFTG
tBlock, End
Block program end-sequence wait time(3)
6
tFTG
tMass Erase
Mass erase time(3)
5297
tFTG
tSeg Erase
Segment erase time(3)
4819
tFTG



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