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MSP430F14X Datasheet(PDF) 31 Page - Texas Instruments |
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MSP430F14X Datasheet(HTML) 31 Page - Texas Instruments |
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31 / 83 page ![]() 31 MSP430F149, MSP430F148, MSP430F147 MSP430F1491, MSP430F1481, MSP430F1471 MSP430F135, MSP430F133 www.ti.com SLAS272H – JULY 2000 – REVISED MAY 2018 Submit Documentation Feedback Product Folder Links: MSP430F149 MSP430F148 MSP430F147 MSP430F1491 MSP430F1481 MSP430F1471 MSP430F135 MSP430F133 Specifications Copyright © 2000–2018, Texas Instruments Incorporated (1) The sensor current ISENSOR is consumed if (ADC12ON = 1 and REFON = 1), or (ADC12ON = 1 AND INCH = 0Ah and sample signal is high). Therefore, it includes the constant current through the sensor and the reference. (2) Not production tested, limits characterized (3) The typical equivalent impedance of the sensor is 51 k Ω. The sample time required includes the sensor on-time, tSENSOR(on). (4) No additional current is needed. The VMID is used during sampling. (5) N/A = Not applicable (6) The on-time tVMID(on) is included in the sampling time tVMID(sample); no additional on time is needed. 5.28 12-Bit ADC, Temperature Sensor and Built-In VMID over recommended operating supply voltage and free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT ISENSOR Operating supply current into AVCC terminal (1) REFON = 0, INCH = 0Ah, ADC12ON = N/A, TA = 25°C 2.2 V 40 120 µA 3 V 60 160 VSENSOR Sensor output voltage(2) ADC12ON = 1, INCH = 0Ah, TA = 0°C 2.2 V 986 986 ±5% mV 3 V 986 986 ±5% TCSENSOR Temperature coefficient of sensor output voltage(2) ADC12ON = 1, INCH = 0Ah 2.2 V 3.55 3.55 ±3% mV/°C 3 V 3.55 3.55 ±3% tSENSOR(sample) Sample time required if channel 10 is selected(2)(3) ADC12ON = 1, INCH = 0Ah, Error of conversion result ≤ 1 LSB 2.2 V 30 µs 3 V 30 IVMID Current into divider at channel 11 (4) ADC12ON = 1, INCH = 0Bh 2.2 V N/A(5) µA 3 V N/A VMID AVCC divider at channel 11 ADC12ON = 1, INCH = 0Bh, VMID ≈ 0.5 × VAVCC 2.2 V 1.1 1.1 ±0.04 V 3 V 1.5 1.5 ±0.04 tVMID(sample) Sample time required if channel 11 is selected(6) ADC12ON = 1, INCH = 0Bh, Error of conversion result ≤ 1 LSB 2.2 V 1400 ns 3 V 1220 (1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming methods: individual word or byte write and block write modes. (2) The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297 × 1/fFTG, maximum = 5297 × 1/476 kHz). To achieve the required cumulative mass erase time the flash controller mass erase operation can be repeated until this time is met. A worst case minimum of 19 cycles are required. (3) These values are hardwired into the flash controller state machine (tFTG = 1/fFTG). 5.29 Flash Memory over recommended operating supply voltage and free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCC(PGM/ERASE) Program and erase supply voltage 2.7 3.6 V fFTG Flash timing generator frequency 257 476 kHz IPGM Supply current from DVCC during program VCC = 2.7 V or 3.6 V 3 5 mA IERASE Supply current from DVCC during erase VCC = 2.7 V or 3.6 V 3 7 mA tCPT Cumulative program time(1) VCC = 2.7 V or 3.6 V 4 ms tCMErase Cumulative mass erase time(2) VCC = 2.7 V or 3.6 V 200 ms Program and erase endurance(3) 104 105 cycles tRetention Data retention duration(3) TJ = 25°C 100 years tWord Word or byte program time(3) 35 tFTG tBlock, 0 Block program time for first byte or word(3) 30 tFTG tBlock, 1-63 Block program time for each additional byte or word(3) 21 tFTG tBlock, End Block program end-sequence wait time(3) 6 tFTG tMass Erase Mass erase time(3) 5297 tFTG tSeg Erase Segment erase time(3) 4819 tFTG |
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