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TDA8006H/C2 Datasheet(PDF) 30 Page - NXP Semiconductors |
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TDA8006H/C2 Datasheet(HTML) 30 Page - NXP Semiconductors |
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30 / 40 page ![]() 2000 Feb 21 30 Philips Semiconductors Product specification Multiprotocol IC Card coupler TDA8006 Card supply voltage (pin VCC); note 3 VO(VCC) card supply output voltage inactive no load 0 − 0.1 V IO(VCC) =1mA 0 − 0.3 V pin grounded 0 −−1mA active ICC < 65 mA; 5 V card 4.75 5 5.25 V ICC < 65 mA; 3 V card 2.8 3 3.2 V current pulses of 40 nAs with ICC < 200 mA; t < 400 ns; f < 20 MHz; 5 V card 4.6 − 5.4 V current pulses of 24 nAs with ICC < 200 mA; t < 400 ns; f < 20 MHz; 3 V card 2.75 − 3.25 V IO(VCC) card supply output current from 0 to 3 or 5 V −− 65 mA VCC short circuited to GND −− 250 mA ICC(sd) shutdown current at pin VCC −−80 − mA SR slew rate up or down (capacitor = 100 to 300 nF) 0.10 0.16 0.22 V/ µs Data line (pin I/O); note 4 Vo(I/O) output voltage inactive no load 0 − 0.1 V Io(I/O) =1mA −− 0.3 V Io(I/O) output current inactive and pin grounded 0 −−1mA VOL LOW-level output voltage I/O configured as output; IOL =1mA 0 − 0.3 V VOH HIGH-level output voltage I/O configured as output; IOH < −50 µA 0.8VCC − VCC + 0.25 V VIL LOW-level input voltage I/O configured as input −0.3 − +0.8 V VIH HIGH-level input voltage I/O configured as input 1.5 − VCC V IIL LOW-level input current VIL =0 V −− −600 µA ILIH HIGH-level input leakage current VIH =VCC −− 20 µA ti(r) input rise time CL =30pF −− 1 µs ti(f) input fall time CL =30pF −− 1 µs to(r) output rise time CL =30pF −− 0.1 µs to(f) output fall time CL =30pF −− 0.1 µs Rpu(int) internal pull-up resistance between I/O and VCC 810 13 k Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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