PM6652 datasheet(14/53 Pages) STMICROELECTRONICS

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Electrical characteristics

PM6652

14/53

Doc ID 16867 Rev 5

Current sensing

ICSNS

Input leakage current

µA

Current limit

comparator offset

VOFFS=VPGND-VPHASE

-4

ILIM

ILIM bias current

4.5

5.5

µA

Zero-crossing

comparator offset

-3.5

3.5

High-side and low-side gate drivers

HGATE driver ON-

resistance

HGATE high state (pull-up)

2.0

Ω

HGATE low state (pull-down)

1.6

2.7

Ω

LGATE driver ON-

resistance

LGATE high state (pull-up)

1.7

Ω

LGATE low state (pull-down)

0.6

Ω

UVP/OVP protections, PWRGD and CLKEN# signals

OVPFIXED

Fixed overvoltage

threshold

1.55

OVPLATCHED

Overvoltage threshold

Referred to VDAC value

200

UVPLATCHED

Undervoltage threshold Referred to VDAC value

-300

PWRGD

Upper threshold

Referred to VDAC value

200

Lower threshold

-300

IPWRGD

PWRGD leakage

current

PWRGD forced to 3.3 V

µA

VPWRGD

Output low voltage

Isink=4 mA

250

350

CLKEN#

Output low voltage

Isink=4 mA

250

350

CLKEN# leakage

current

CLKEN# forced to 3.3 V; SSTART=5 V

µA

Current monitor section

IMON

Current monitor output

VCSNS – VOUT = 60 mV;

RIMONFB=1.8 k

Ω, RIMON=10 kΩ

970

1000

1030

VCSNS – VOUT = 30 mV;

RIMONFB=1.8 k

Ω, RIMON=10 kΩ

474

500

526

VCSNS – VOUT = 15 mV;

RIMONFB=1.8 k

Ω, RIMON=10 kΩ

226

250

274

Current monitor clamp,

referred to GSNS

8 k

Ω <RIMON<16 kΩ;

GSNS-AGND<20 mV

1.15

Current monitor input

offset

IIMON = 0 µA

1.0

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

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