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MBM29PL65LM90TN Datasheet(PDF) 33 Page - SPANSION |
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MBM29PL65LM90TN Datasheet(HTML) 33 Page - SPANSION |
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33 / 56 page  MBM29PL65LM-90/10 33 (Continued) *1 : This does not include the preprogramming time. *2 : This timing is for Sector Group Protection operation. *3 : This timing is for Accelerated Program operation. s s s s ERASE AND PROGRAMMING PERFORMANCE s s s s TSOP (1) PIN CAPACITANCE Note : Test conditions TA = +25°C, f = 1.0 MHz DQ15 pin capacitance is stipulated by output capacitance. Parameter Symbol MBM29PL65LM-90 MBM29PL65LM-10 Unit JEDEC Standard Min Typ Max Min Typ Max Rise Time to VID *2 tVIDR tVIDR 500 — — 500 — — ns Rise Time to VACC *3 tVACCR tVACCR 500 — — 500 — — ns Voltage Transition Time *2 tVLHT tVLHT 4— —4 — — µs Write Pulse Width *2 tWPP tWPP 100 — — 100 — — µs OE Setup Time to WE Active *2 tOESP tOESP 4— —4 — — µs CE Setup Time to WE Active *2 tCSP tCSP 4— —4 — — µs RESET Pulse Width tRP tRP 500 — — 500 — — ns RESET High Time Before Read tRH tRH 100 — — 100 — — ns Delay Time from Embedded Output Enable tEOE tEOE — — 90 — — 100 ns Erase Time-out Time tTOW tTOW 50 — — 50 — — µs Erase Suspend Transition Time tSPD tSPD — — 20 — — 20 µs Parameter Limits Unit Remarks Min Typ Max Sector Erase Time — 1 15 s Excludes programming time prior to erasure Programming Time — 100 3000 µs Excludes system-level overhead Effective Page Programming Time (Write Buffer Programming) — 23.5 — µs Chip Programming Time — — 600 s Absolute Maximum Programming Time (16 words) —— 6 ms Non programming within the same page Erase/Program Cycle 100,000 — — cycle — Parameter Symbol Test Setup Value Unit Min Typ Max Input Capacitance CIN VIN = 0 — 8 10 pF Output Capacitance COUT VOUT = 0 — 8.5 12 pF Control Pin Capacitance CIN2 VIN = 0 — 8 10 pF RESET pin and ACC Pin Capacitance CIN3 VIN = 0 — 20 25 pF |
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