MBM29PL65LM90TN datasheet(1/56 Pages) SPANSION

Part #	MBM29PL65LM90TN

Description	FLASH MEMORY CMOS 64 M (4M X 16) BIT MirrorFlashTM

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Manufacturer	SPANSION [SPANSION]

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DS05-20903-1E

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

64 M (4M

×××× 16) BIT

MirrorFlashTM

MBM29PL65LM-90/10

s

s DESCRIPTION

MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the

chip, comprehensive erase and by-the-unit, individual sector erase.

Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed stand-

by mode operation.

MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type

is 48-pin TSOP.

Embedded Program AlgorithmTM, when executed with erase or program command sequences, automatically times

the program pulse widths and verifies proper cell margin.

MBM29PL65LM, because of its capability in electrical data erase and program through write command, enables

to rewrite data within the internal system. It is a truly dependable device for vast application possibilities.

s

s PRODUCT LINE UP

s

s PACKAGE

Notes:

Programming in byte mode (

× 8) is prohibited.

Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same

address.

Part No.

MBM29PL65LM-90

MBM29PL65LM-10

VCC

3.0 V to 3.6 V

VCCQ

VCC

Max Address Access Time

90 ns

100 ns

Max CE Access Time

90 ns

100 ns

Max Page Read Access Time

25 ns

30 ns

48-pin plastic TSOP (1)

(FPT-48P-M19)

Marking Side

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