STM8S105C4B3C datasheet(61/127 Pages) STMICROELECTRONICS

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Unit

Max.

(1)

Ratings

Symbol

±4

Injected current on NRST pin

IINJ(PIN)

(4) (5)

±4

Injected current on OSCIN pin

±4

Injected current on any other pin

(6)

±20

Total injected current (sum of all I/O and control pins)

(6)

ΣIINJ(PIN)

(4)

(1) Data based on characterization results, not tested in production.

(2) All power (V

DD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be

connected to the external supply.

(3) I/O pins used simultaneously for high current source/sink must be uniformly spaced

around the package between the VDDIO/VSSIO pins.

(4) I

INJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected.

If VIN maximum cannot be respected, the injection current must be limited externally to the

IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced

by VIN<VSS. For true open-drain pads, there is no positive injection current, and the

corresponding VIN maximum must always be respected

(5) Negative injection disturbs the analog performance of the device. See note in I2C interface

characteristics.

(6) When several inputs are submitted to a current injection, the maximum ΣI

INJ(PIN) is the

absolute sum of the positive and negative injected currents (instantaneous values). These

results are based on characterization with ΣIINJ(PIN) maximum current injection on four I/O

port pins of the device.

Table 18: Thermal characteristics

Unit

Value

Ratings

Symbol

°C

-65 to 150

Storage temperature range

TSTG

150

Maximum junction temperature

Operating conditions

10.3

The device must be used in operating conditions that respect the parameters in the table

below. In addition, full account must be taken of all physical capacitor characteristics and

tolerances.

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Electrical characteristics

STM8S105xx

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