STM8S105C4B3 datasheet(82/127 Pages) STMICROELECTRONICS

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Unit

Max

Typ

Min

(1)

Conditions

Parameter

Symbol

3.3

Fast programming time for 1 block

(128 bytes)

3.3

Erase time for 1 block (128 bytes)

terase

cycles

10 k

TA = +85 °C

Erase/write cycles

(2)(program

memory)

NRW

300 k

TA = +125 ° C

Erase/write cycles(data memory)

(2)

years

TRET = 55° C

Data retention (program memory)

after 10k erase/write cycles at TA

= +85 °C

tRET

TRET = 55° C

Data retention (data memory) after

10k erase/write cycles at TA = +85

°C

TRET = 85° C

Data retention (data memory) after

300 k erase/write cyclesat TA =

+125 °C

Supply current (Flash

programming or erasing for 1 to

128 bytes)

IDD

(1) Data based on characterization results, not tested in production.

(2) The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes

even when a write/erase operation addresses a single byte.

I/O port pin characteristics

10.3.6

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All unused

pins must be kept at a fixed voltage: using the output mode of the I/O for example or an

external pull-up or pull-down resistor.

Table 38: I/O static characteristics

Unit

Max

Typ

Min

Conditions

Parameter

Symbol

0.3 x VDD

-0.3

VDD = 5 V

Input low level

voltage

VIL

DocID14771 Rev 9

82/127

STM8S105xx

Electrical characteristics

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