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R5F110ME Datasheet(PDF) 85 Page - Renesas Technology Corp |
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R5F110ME Datasheet(HTML) 85 Page - Renesas Technology Corp |
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85 / 153 page ![]() RL78/L1C 2. ELECTRICAL SPECIFICATIONS (A: TA = -40 to +85 °C) R01DS0192EJ0200 Rev. 2.00 Page 85 of 149 Feb 21, 2014 2.9 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR reset is effected, but data is not retained when a POR reset is effected. 2.10 Flash Memory Programming Characteristics Note 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. Note 2. When using flash memory programmer and Renesas Electronics self programming library Note 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. 2.11 Dedicated Flash Memory Programmer Communication (UART) (TA = -40 to +85 °C, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Data retention supply voltage VDDDR 1.46 Note 3.6 V (TA = -40 to +85 °C, 1.8 V VDD 3.6 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit CPU/peripheral hardware clock frequency fCLK 2.4 V VDD 3.6 V 124 MHz Number of code flash rewrites Notes 1, 2, 3 Cerwr Retained for 20 years TA = 85 C 1,000 Times Number of data flash rewrites Notes 1, 2, 3 Retained for 1 year TA = 25 C 1,000,000 Retained for 5 years TA = 85 C 100,000 Retained for 20 years TA = 85 C 10,000 (TA = -40 to +85 °C, 1.8 V VDD 3.6 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Transfer rate During serial programming 115,200 1,000,000 bps VDD STOP instruction execution Standby release signal (interrupt request) STOP mode Data retention mode Operation mode VDDDR |
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