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P87LPC779FDH Datasheet(PDF) 65 Page - NXP Semiconductors

Part # P87LPC779FDH
Description  CMOS single-chip 8-bit 80C51 microcontroller with 128-byte data RAM, 8 kB OTP
PDF  74 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

P87LPC779FDH Datasheet(HTML) 65 Page - NXP Semiconductors

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Philips Semiconductors
P87LPC779
CMOS single-chip 8-bit microcontroller
Product data
Rev. 02 — 03 May 2004
65 of 74
9397 750 13213
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10. Static characteristics
Table 55:
DC electrical characteristics
VDD = 2.7 V to 5.5 V unless otherwise specified.
Tamb = −40 °C to +85 °C for extended industrial, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
IDD
power supply current, operating
5.0 V; 20 MHz
[10]
-15
25
mA
3.0 V; 10 MHz
[10]
-4
7
mA
IID
power supply current, Idle mode
5.0 V; 20 MHz
[10]
-
6
10
mA
3.0 V; 10 MHz
[10]
-2
4
mA
IPD
Power supply current,
Power-down mode
5.0 V
[10]
-1
10
µA
3.0 V
[10]
-1
5
µA
VRAM
RAM keep-alive voltage
1.5
-
-
V
VIL
Low-level input voltage (TTL
input)
4.5 V < VDD < 6.0 V
−0.5
-
0.2VDD − 0.1 V
VIL1
negative-going threshold
(Schmitt input)
−0.5
-
0.3VDD
V
VIH
High-level input voltage (TTL
input)
0.2VDD + 0.9
-
VDD + 0.5
V
VIH1
positive-going threshold (Schmitt
input)
0.7VDD
-VDD + 0.5
V
Vhys
hysteresis voltage
-
0.2VDD
-V
VOL
LOW-level output voltage; all
ports[4][8]
IOL = 3.2 mA;
VDD = 4.5 V
-
-
0.4
V
VOL1
LOW-level output voltage; all
ports[4][8]
IOL =20mA;
VDD = 4.5 V
-
-
1.0
V
VOH
HIGH-level output voltage, all
ports[2]
IOH = −30 µA;
VDD = 4.5 V
VDD − 0.7
-
-
V
VOH1
HIGH-level output voltage, all
ports[3]
IOH = −1.0 mA;
VDD = 4.5 V
VDD − 0.7
-
-
V
Cio
input/output pin capacitance[9]
-
-
15
pF
IIL
logic 0 input current, all ports[7]
VIN = 0.4 V
-
-
−50
µA
ILI
input leakage current, all ports[6]
VIN =VIL or VIH
--
±2
µA
ITL
logic 1-to-0 transition current,
all ports[2][5]
VIN = 2.0 V at
VDD = 5.5 V
−150
-
−650
µA
RRST
internal reset pull-up resistor
40
-
225
k
Ω



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