STM8L052R8 datasheet(63/109 Pages) STMICROELECTRONICS

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STM8L052R8

Electrical parameters

Doc ID023337 Rev 2

63/109

IDD(RUN)

Supply

current

in Run

mode

All peripherals

OFF, code

executed from

Flash,

VDD from 1.8 V

to 3.6 V

HSI RC

osc.(6)

fCPU = 125 kHz

0.35

0.46

0.48

fCPU = 1 MHz

0.54

0.65

0.67

fCPU = 4 MHz

1.16

1.27

1.29

fCPU = 8 MHz

1.97

2.08

2.1

fCPU = 16 MHz

3.54

3.65

3.67

HSE external

clock

(fCPU=fHSE)

(5)

fCPU = 125 kHz

0.35

0.44

0.46

fCPU = 1 MHz

0.53

0.62

0.64

fCPU = 4 MHz

1.13

1.22

1.24

fCPU = 8 MHz

22.09

2.11

fCPU = 16 MHz

3.69

3.78

3.8

LSI RC osc.

fCPU = fLSI

0.110

0.123

0.130

LSE external

clock

(32.768 kHz)(7)

fCPU = fLSE

0.100

0.101

0.104

All peripherals OFF, VDD from 1.8 V to 3.6 V, HSI internal RC osc., fCPU=fSYSCLK

CPU executing typical data processing

The run from RAM consumption can be approximated with the linear formula:

IDD(run_from_RAM) = Freq. * 95 µA/MHz + 250 µA

Tested in production.

Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption

(IDD HSE) must be added. Refer to Table 28.

The run from Flash consumption can be approximated with the linear formula:

IDD(run_from_Flash) = Freq. * 200 µA/MHz + 330 µA

Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption

(IDD LSE) must be added. Refer to Table 29

Table 17.

Total current consumption in Run mode (continued)

Symbol

Parameter

Conditions(1)

Typ.

Max.

Unit

55°C

85 °C

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