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STM8L052R8 Datasheet(PDF) 78 Page - STMicroelectronics |
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STM8L052R8 Datasheet(HTML) 78 Page - STMicroelectronics |
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78 / 109 page  Electrical parameters STM8L052R8 78/109 Doc ID023337 Rev 2 Figure 18. Typical HSI frequency vs. VDD Low speed internal RC oscillator (LSI) In the following table, data are based on characterization results, not tested in production. Table 31. LSI oscillator characteristics Symbol Parameter Conditions(1) 1. VDD = 1.8 V to 3.6 V, TA = -40 to 85 °C unless otherwise specified. Min. Typ. Max. Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Guaranteed by Design, not tested in production. µs D(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤ TA ≤ 85 °C -12 11 % 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 1.8 1.95 2.1 2.25 2.4 2.55 2.7 2.85 3 3.15 3.3 3.45 3.6 VDD [V] -40°C 25°C 85°C ai18218V3 |
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